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Precisely nanostructured ▫$HfO_2$▫ rear passivation layers for ultra-thin ▫$Cu(In,Ga)Se_2$▫Anacleto, Pedro ...Source: Progress in photovoltaics : research and applications. - ISSN 1062-7995 (Vol. 30, iss. 11, Nov. 2022, str. 1289-1297)Type of material - article, component part ; adult, seriousPublish date - 2022Language - englishCOBISS.SI-ID - 108567811
Author
Anacleto, Pedro |
Hägglund, Carl |
Chen, Wei-Chao |
Kovačič, Milan, 1987- |
Krč, Janez, 1974- |
Edoff, Marika |
Sadewasser, Sascha
Topics
ALD |
Cu(In,Ga)Se2 |
CIGS |
HfO2 |
pasivacija |
točkovni kontakt |
zelo tanko |
ALD |
Cu(In,Ga)Se2 |
CIGS |
HfO2 |
passivation |
point contact |
ultra-thin |
ultra-thin
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Database name | Field | Year |
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Links to authors' personal bibliographies | Links to information on researchers in the SICRIS system |
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Anacleto, Pedro | ![]() |
Hägglund, Carl | ![]() |
Chen, Wei-Chao | ![]() |
Kovačič, Milan, 1987- | 36459 |
Krč, Janez, 1974- | 19221 |
Edoff, Marika | ![]() |
Sadewasser, Sascha | ![]() |
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