Semiconductor technology is heading toward the 10 nm node and even smaller in the coming years. This development relies not only on new process technologies, like lithography techniques, but also on ...safer and cleaner handling techniques that meet the high-end requirements of the production line. In this paper, the evaluation of different end-effectors and handling techniques regarding particle generation, organic, and metallic contamination effects will be discussed. Bernoulli, ultrasonic, carbon, and standard vacuum end-effectors are being tested and compared with each other for the handling of 300 mm wafers.
Semiconductor manufacturing is a highly complex process, with a high need for process control, but equally important are effective methods for contamination control. Methods for detection of airborne ...and surface molecular contaminants were enhanced to meet the increasing requirements for future More Moore and More than Moore applications. Improved qualitative and quantitative contamination analysis methods of organic and inorganic compounds allow exact monitoring of contamination in front- as well as back-end processes. By the use of state-of-the-art analytical systems combined with validated analytical procedures and advanced sample preparation techniques contamination analytical results with higher reproducibility and reliability are being ensured.
Semiconductor technology is heading towards the 10 nm node and even smaller in the coming years. This development relies not only on new process technologies, like lithography techniques, but also on ...safer and cleaner handling techniques that meet the high-end requirements of the production line. In this paper, the evaluation of different end-effectors and handling techniques regarding particle generation, organic and metallic contamination effects will be discussed. Bernoulli, carbon and standard vacuum end-effectors are being tested and compared with each other for the handling of 200 mm and 300 mm wafers.
In this paper we address the problem of revealing copper contamination induced in the device region by the final part of the process. A method to reveal the effects of copper contamination is ...identified based on the recovery of MOS capacitors from deep depletion. In the presence of copper contamination carrier generation is dominated by surface generation, which is not surprising because copper is known to be prone to surface segregation. Copper segregation at the wafer surface was also confirmed by TOF-SIMS measurements. The measurements of surface generation velocity are non-destructive and the required structures can be easily integrated in device wafers. However, a recovery of the copper-related surface generation velocity with the time spent after the thermal treatment was observed. For this reason, it is important that the measurements are carried out in a short time after the thermal treatment responsible for copper segregation at the wafer surface.
The 'Analytical Network for Nanotech' is a European analytical infrastructure supporting the development of micro- and nano-technologies. High quality research requires comparability of results when ...analytical methodologies are supplied by different sources. This is a requirement of quality controlled industries, too. Inorganic contamination capabilities of the joint laboratory are Total Reflection X-Ray Fluorescence (TXRF) using Synchrotron Radiation (SR) or X-ray tubes, Vapor Phase Decomposition (VPD) and subsequent Graphite Furnace Atomic Absorption Spectroscopy (GF-AAS) or Inductively Coupled Plasma Mass Spectrometry (ICPMS), and Time of Flight Secondary Ion Mass Spectrometry (ToF SIMS). Discrepancies of results from different tools using TXRF for detection of metal contamination on silicon wafer surfaces were observed during different round robin using spin coated silicon wafers and deposited point like contamination. The results were validated using GF-AAS and ICPMS. The impact of the (reference) sample used for calibration on the evaluated measurement was confirmed. Furthermore, measurement geometries, substrate orientation and reliability of the angle of incidence are crucial for the comparability of the results of the TXRF systems.
The European Integrated Activity of Excellence and Networking for Nano- and Micro-Electronics Analysis (ANNA), www.ANNA-i3.net, addresses the development and assessment of new methodologies and ...metrologies for the detection of low concentration inorganic contaminants on and in silicon as well as for novel materials. The comparison of various analytical techniques available to the participating partners is important for assessment of both instrumentation and quantification reliability.
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