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  • High-quality, large-area Mo... High-quality, large-area MoSe2 and MoSe2/Bi2Se3 heterostructures on AlN(0001)/Si(111) substrates by molecular beam epitaxy
    Xenogiannopoulou, E; Tsipas, P; Aretouli, K E ... Nanoscale, 05/2015, Volume: 7, Issue: 17
    Journal Article
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    Open access

    Atomically-thin, inherently 2D semiconductors offer thickness scaling of nanoelectronic devices and excellent response to light for low-power versatile applications. Using small exfoliated flakes, ...
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  • Hierarchical structure of t... Hierarchical structure of the cognitive processes in schizophrenia: the fundamental role of processing speed
    Ojeda, N; Peña, J; Schretlen, D.J ... Schizophrenia research, 03/2012, Volume: 135, Issue: 1
    Journal Article
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    Abstract Objective Decreased processing speed (PS) is a key feature of schizophrenia with respect to cognition, functional outcome and clinical symptoms. Our objective was to test whether PS slowing ...
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  • Episodic Memory in Dementia... Episodic Memory in Dementia: Characteristics of New Learning that Differentiate Alzheimer's, Huntington's, and Parkinson's Diseases
    Aretouli, Eleni; Brandt, Jason Archives of clinical neuropsychology, 08/2010, Volume: 25, Issue: 5
    Journal Article
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    Differences in the memory characteristics of patients with Alzheimer's disease (AD), Huntington's disease (HD), and Parkinson's disease (PD) were investigated with tests that assess learning and ...
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  • Subjective Cognitive Declin... Subjective Cognitive Decline as a predictor of Frailty in older adults: Hellenic Longitudinal Investigation of Aging and Diet study (HELIAD)
    Margioti, E.; Scarmeas, N.; Yannakoulia, M. ... The Journal of Frailty & Aging, 2023/7, Volume: 12, Issue: 3
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    Background Subjective cognitive decline (SCD) is a self-evaluation of cognitive impairment, in the absence of observed objective cognitive deficits on a neuropsychological assessment. Frailty refers ...
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  • Epitaxial 2D MoSe2 (HfSe2) ... Epitaxial 2D MoSe2 (HfSe2) Semiconductor/2D TaSe2 Metal van der Waals Heterostructures
    Tsoutsou, Dimitra; Aretouli, Kleopatra E.; Tsipas, Polychronis ... ACS applied materials & interfaces, 01/2016, Volume: 8, Issue: 3
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    Molecular beam epitaxy of 2D metal TaSe2/2D MoSe2 (HfSe2) semiconductor heterostructures on epi-AlN(0001)/Si(111) substrates is reported. Electron diffraction reveals an in-plane orientation ...
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  • High electron mobility tran... High electron mobility transistors based on the AlN/GaN heterojunction
    Adikimenakis, A.; Aretouli, K.E.; Iliopoulos, E. ... Microelectronic engineering, 04/2009, Volume: 86, Issue: 4
    Journal Article, Conference Proceeding
    Peer reviewed

    The development of high electron mobility transistors (HEMTs) from AlN/GaN heterostructures, grown by plasma assisted molecular beam epitaxy has been investigated. It is shown that AlN can be grown ...
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  • Mechanism of Si outdiffusio... Mechanism of Si outdiffusion in plasma-assisted molecular beam epitaxy of GaN on Si
    Adikimenakis, A.; Aretouli, K. E.; Tsagaraki, K. ... Physica status solidi. C, 01/2013, Volume: 10, Issue: 1
    Journal Article
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    The mechanism of Si outdiffusion related to the formation of Si‐rich GaN clusters during the growth of GaN‐on‐Si by plasma‐assisted molecular beam epitaxy (PAMBE) has been identified. GaN thin films ...
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  • Sleep Quality and Cognitive... Sleep Quality and Cognitive Abilities in the Greek Cohort of Epirus Health Study
    Koutsonida, Myrto; Psyhogiou, Maria; Aretouli, Eleni ... Nature and science of sleep, 01/2024, Volume: 16
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    Sleep is essential to all human body functions as well as brain functions. Inadequate sleep quantity and poor sleep quality have been shown to directly affect cognitive functioning and especially ...
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