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  • Experimental study of low v... Experimental study of low voltage anode hole injection in thin oxides
    Esseni, David; Bude, Jeff D; Selmi, Luca Microelectronic engineering, 11/2001, Volume: 59, Issue: 1
    Journal Article, Conference Proceeding
    Peer reviewed

    In the context of an assessment of the physical mechanisms governing thin oxide degradation, this paper reports an experimental investigation of anode hole injection (AHI) at low gate voltages ( V G) ...
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  • First-principles calculatio... First-principles calculations of the Urbach tail in the optical absorption spectra of silica glass
    Sadigh, B; Erhart, P; Åberg, D ... Physical review letters, 01/2011, Volume: 106, Issue: 2
    Journal Article
    Peer reviewed
    Open access

    We present density-functional theory calculations of the optical absorption spectra of silica glass for temperatures up to 2400 K. The calculated spectra exhibit exponential tails near the ...
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  • HF-based etching processes ... HF-based etching processes for improving laser damage resistance of fused silica optical surfaces
    Suratwala, T I; Miller, P E; Bude, J D ... Journal of the American Ceramic Society, 02/2010, Volume: 94, Issue: 2
    Journal Article
    Peer reviewed
    Open access

    The effect of various HF-based etching processes on the laser damage resistance of scratched fused silica surfaces has been investigated. Conventionally polished and subsequently scratched fused ...
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  • The impact of obesity on ou... The impact of obesity on outcomes of midwife‐led pregnancy and childbirth in a primary care population: a prospective cohort study
    Daemers, DOA; Wijnen, HAA; Limbeek, EBM ... BJOG : an international journal of obstetrics and gynaecology, October 2014, Volume: 121, Issue: 11
    Journal Article
    Peer reviewed

    Objective To assess the impact of obesity on the likelihood of remaining in midwife‐led care throughout pregnancy and childbirth. Design Secondary analysis of data from a prospective cohort study. ...
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  • Impact ionization and distr... Impact ionization and distribution functions in sub-micron nMOSFET technologies
    Bude, J.D.; Mastrapasqua, M. IEEE electron device letters, 10/1995, Volume: 16, Issue: 10
    Journal Article
    Peer reviewed

    The physics of impact ionization generated substrate current in 0.1 μm nMOSFET's technologies is clarified by comparison of experiment and full-band Monte Carlo (MC) simulation for a wide range of ...
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  • On interface and oxide degr... On interface and oxide degradation in VLSI MOSFETs. I. Deuterium effect in CHE stress regime
    Esseni, D.; Bude, J.D.; Selmi, L. IEEE transactions on electron devices, 02/2002, Volume: 49, Issue: 2
    Journal Article
    Peer reviewed

    This paper analyzes in detail the generation of interface states (N/sub it/) and stress-induced leakage current (SILC) during channel hot electron (CHE) stress experiments in the context of a ...
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