Akademska digitalna zbirka SLovenije - logo

Search results

Basic search    Expert search   

Currently you are NOT authorised to access e-resources SI consortium. For full access, REGISTER.

36 37 38
hits: 373
371.
  • Maximizing ESD design window by optimizing gate bias for cascoded drivers in 45nm and beyond SOI technologies
    Mitra, S; Gauthier, R; Shunhua Chang ... Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2010, 2010-Oct.
    Conference Proceeding

    In advanced SOI technologies, the bottom gate voltage plays an important role in achieving the maximum trigger voltage Vt1 of the cascoded drivers. A comparable MOSFET and BJT current handling is ...
Full text
Available for: IJS, NUK, UL, UM
372.
  • Predictive full circuit ESD simulation and analysis using extended ESD compact models: Methodology and tool implementation
    Junjun Li; Gauthier, R; Joshi, A ... Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2010, 2010-Oct.
    Conference Proceeding

    We present a new ESD compact modeling methodology using Verilog-A to enable predictive full circuit ESD simulation along with supporting hardware and failure analysis results. We also present a new ...
Full text
Available for: IJS, NUK, UL, UM
373.
Full text

PDF

Load filters