PbZr
x
Ti
1-x
O
3
(PZT) films were fabricated on FTO substrates by using precursor solutions containing polyvinylpyrrolidone additive and spinning-coating/annealing process. The correlation of the ...formation, ferroelectric, dielectric and optical reflection features of the layered PZT films with Zr/Ti atomic ration had been studied. It was found that each PZT film was fully crystallized and displayed a polycrystalline phase. The PZT films with Zr content ∼ 0.4-0.6 showed clearly distinguishable layered structures, and exhibited excellent ferroelectric and dielectric properties, together with good optical performance as dielectric mirrors. These PZT films possessed high reflectivity bands, the band widths were all over 50 nm and the peak reflectivities were more than 70%. They also had dielectric constants >550 Fm
−1
at 10 KHz, remnant polarizations >24 μC/cm
2
at 100 V polarizing voltage, rendering their potential application in photonic band gap engineering and integrated optoelectronics.
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BFBNIB, GIS, IJS, KISLJ, NUK, PNG, UL, UM, UPUK
Ferroelectric bismuth vanadate (Bi(2)VO(5.5)) thin films were successfully fabricated on n-type Si (100) substrate by sol-gel method. The microstructures of the films were investigated by x-ray ...diffraction and atomic force microscopy. The results indicate that Bi(2)VO(5.5) thin films show a good match with the n-Si substrate and a high c-axis preferred orientation with a uniform grain distribution. The investigation on the electrical properties of Bi(2)VO(5.5) thin films indicates that Bi(2)VO(5.5) thin films show good capacitance-voltage characteristics, and the memory window is larger than 0.4V when the gate voltage is plus or minus 4V. The leakage current density is about 5x10(-8) Acm(-2) when the applied voltage is 3.2V. The dielectric constant and dielectric loss measured at 1 kHz are 95 and 0.22, respectively. All the results indicate that Bi(2)VO(5.5) thin films have potential applications in ferroelectric memory devices.
Bright monomeric near-infrared fluorescent proteins (NIR-FPs) are useful as markers for labeling proteins and cells and as sensors for reporting molecular activities in living cells and organisms. ...However, current monomeric NIR-FPs are dim under excitation with common 633/635/640 nm lasers, limiting their broad use in cellular/subcellular level imaging. Here, we report a bright monomeric NIR-FP with maximum excitation at 633 nm, named mIFP663, engineered from Xanthomonas campestris pv Campestris phytochrome (XccBphP). mIFP663 has high molecular brightness with a large extinction coefficient (86,600 M–1 cm–1) and a decent quantum yield (19.4%), and high cellular brightness that is 3–6 times greater than those of spectrally similar NIR-FPs in HEK293T cells in the presence of exogenous BV. Moreover, we demonstrate that mIFP663 is able to label critical cellular and viral proteins without perturbing subcellular localization and virus replication, respectively. Finally, with mIFP663, we engineer improved bimolecular fluorescence complementation (BiFC) and new bioluminescent resonance energy transfer (BRET) systems to detect protein–protein interactions in living cells.
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IJS, KILJ, NUK, PNG, UL, UM
Cu sub(2)ZnSnS sub(4) and Cu sub(2)ZnGeS sub(4) thin films made from the earth abundant and non-toxic materials are quaternary semiconducting compounds which have received increasing interest for ...solar cells applications. Cu sub(2)ZnSnS sub(4) and Cu sub(2)ZnGeS sub(4) thin films have been synthesized by sulfurization of radio frequency magnetron sputtered precursors. The structural and optical properties of the thin films have been investigated and discussed. The result of X-ray diffraction demonstrates that the Cu sub(2)ZnSnS sub(4) and Cu sub(2)ZnGeS sub(4) thin films have kesterite (KS; space group I) crystal structure. An obvious blue shift is observed in the Raman spectra as smaller Ge replaces Sn. It is due to the fact that the radius of Ge cation is smaller than that of Sn cation, which results in the shrink of the lattice. Further transmission spectra demonstrate that the values of band gap for CZTS and CZGS thin films are 1.54 eV and 1.98 eV, respectively.
(Bi1-xSmx)(Fe0.95Mn0.05)O3 (x=0.00, 0.03 and 0.06) thin films were deposited on the quartz substrates by sol-gel technique. The results of X-ray diffraction patterns indicated all thin films had ...rhombohedral perovskite structure. Moreover, the Sm and Mn co-doping at A-and B-site of BiFeO3 resulted in the structural distortion. Scanning electron microscope measurements exhibited that the uniform surface morphology could be obtained by co-doping and the average grain size of the films decreased with increasing Sm content. Furthermore, the fundamental absorption edges of xBSFMO films showed a blue shift with the increase of Sm content which can be observed in transmittance spectra. The optical band gap of the thin films for x= 0.00, 0.03 and 0.06 can be expressed by (0.84x+2.62) eV, which is due to the Burstein-Moss effect.
(Bi sub(1-x)Sm sub(x))(Fe sub(0.95)Mn sub(0.05))O sub(3) (x = 0.00, 0.03 and 0.06) thin films were deposited on the quartz substrates by sol-gel technique. The results of X-ray diffraction patterns ...indicated all thin films had rhombohedral perovskite structure. Moreover, the Sm and Mn co-doping at A-and B-site of BiFeO sub(3) resulted in the structural distortion. Scanning electron microscope measurements exhibited that the uniform surface morphology could be obtained by co-doping and the average grain size of the films decreased with increasing Sm content. Furthermore, the fundamental absorption edges of xBSFMO films showed a blue shift with the increase of Sm content which can be observed in transmittance spectra. The optical band gap of the thin films for x = 0.00, 0.03 and 0.06 can be expressed by (0.84x+2.62) eV, which is due to the Burstein-Moss effect.
Understanding of the RNA editing process has been broadened considerably by the next generation sequencing technology; however, several issues regarding this regulatory step remain unresolved - the ...strategies to accurately delineate the editome, the mechanism by which its profile is maintained, and its evolutionary and functional relevance. Here we report an accurate and quantitative profile of the RNA editome for rhesus macaque, a close relative of human. By combining genome and transcriptome sequencing of multiple tissues from the same animal, we identified 31,250 editing sites, of which 99.8% are A-to-G transitions. We verified 96.6% of editing sites in coding regions and 97.5% of randomly selected sites in non-coding regions, as well as the corresponding levels of editing by multiple independent means, demonstrating the feasibility of our experimental paradigm. Several lines of evidence supported the notion that the adenosine deamination is associated with the macaque editome - A-to-G editing sites were flanked by sequences with the attributes of ADAR substrates, and both the sequence context and the expression profile of ADARs are relevant factors in determining the quantitative variance of RNA editing across different sites and tissue types. In support of the functional relevance of some of these editing sites, substitution valley of decreased divergence was detected around the editing site, suggesting the evolutionary constraint in maintaining some of these editing substrates with their double-stranded structure. These findings thus complement the "continuous probing" model that postulates tinkering-based origination of a small proportion of functional editing sites. In conclusion, the macaque editome reported here highlights RNA editing as a widespread functional regulation in primate evolution, and provides an informative framework for further understanding RNA editing in human.
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DOBA, IZUM, KILJ, NUK, PILJ, PNG, SAZU, SIK, UILJ, UKNU, UL, UM, UPUK
Cu sub(2)MnSnS sub(4) thin film was successfully prepared by a sol-gel technique on soda lime glass substrate from metal salts and thiourea. The structural and morphological properties of the ...fabricated film were characterized by X-ray diffraction, Raman spectroscopy, scanning electron microscopy and atomic force microscopy. The combination of the X-ray diffraction results and Raman spectroscopy reveal that this obtained layer is composed by Cu sub(2)MnSnS sub(4) phase and has a stannite structure with preferential orientation along the (112) direction. The scanning electron microscopy and atomic force microscopy results show that the synthesized thin film is smooth and compact without any visible cracks or pores. The band gap of the Cu sub(2)MnSnS sub(4) thin film is about 1.29 eV determined by the UV-vis-NIR absorption spectra measurement, which indicates it has potential applications in solar cells.
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