In 30 patients with clinical diagnosis of ischemic heart disease, we correlated the segmental mobility of left ventricular walls as estimated by two-dimensional echocardiography (2-D Echo), and ...coronary arteriography findings. In consideration to the distribution of the coronary arteries, the left ventricular circle was divided in 5 sections: anterior interventricular septum, anterior wall, lateral wall, posterior wall and posterior interventricular septum. Each one of these walls were divided in three levels: basal, mid and apical, integrating 15 segments. Potentially we could study 450 segments, but it was only possible to examine 444 (98.6%) by 2-D Echo. In 26 patients in whom the coronary arteriography demonstrated ischemic heart disease, the 2-D Echo showed 100% sensitivity and specificity in recognizing the disease. In respect to the number of obstructed vessels, the sensitivity was the same and the specificity 66.6%. Regarding the location of the obstruction; the results of sensitivity and specificity were: for the left anterior descending 96% and 80% respectively, for the left circumflex 87% and 92% and for the right coronary artery 95% and 90%. In regard to the level of obstruction (proximal, mid or distal) the values were 88.6% and 81.8%. Finally, to recognize the presence of significant obstruction (75% or more) the sensitivity of 2-D Echo was 95% and the specificity 76.1%. It is concluded that the 2-D Echo is useful for the diagnosis of coronary artery disease, the number of obstructed vessels, the location, the level and the degree of obstruction.
This paper presents a novel application of shallow trench isolation (less than one micron deep) to buried N' FAMOS (Floating gate Avalanche Injection MOS) transistors with applications to VLSI ...EPROMs. The trench isolation has improved not only bitline isolation but also the programming efficiency of an equally novel cross-point Advanced Contactless EPROM (ACE) cell.1
A revolutionary EPROM cell technology has been developed. Its suitability to realize high density memories with performance and reIiability comparable to the conventional EPROMS has been demonstrated ...with a 64K bit density vehicle. This self-aligned contactless cell is in a crosspoint array configuration, and occupies 33 percent less area than a conventional cell at comparable design rules. The planar, contactless technology has enhanced manufacturability, scalability and is ideally suited for memories beyond megabit density.
A one megabit CMOS EPROM with a Floating gate Avalanche injection MOS (FAMOS) cell area of 8.6 µm 2 has been fabricated at a conservative design rule of 1.2µm This cell, to our knowledge, is the ...smallest reported EPROM cell. The process utilized an Advanced Contactless EPROM (ACE) technology combined with a High Voltage Enhanced Performance Implanted CMOS (HVEPIC) technology. The combined technique has produced fully functional one MBIT EPROMs with high density (bar size= 35.5 mm 2 of 55 Kmil 2 ) and enhanced performance (130 ns access time) The HVEPIC/ACE technology features twin well CMOS, buried N+ bitlines, ultra-smooth polysilicon floating gates, oxide-nitride-oxide inter-polysilicon dielectric, double level polysilicon, single level metal, self-aligned TiSi2 and a post source/drain anneal processing temperature limited to 800°C.
