Breaking the Speed Limits of Phase-Change Memory Loke, D.; Lee, T. H.; Wang, W. J. ...
Science (American Association for the Advancement of Science),
06/2012, Volume:
336, Issue:
6088
Journal Article
Peer reviewed
Phase-change random-access memory (PCRAM) is one of the leading candidates for next-generation data-storage devices, but the trade-off between crystallization (writing) speed and amorphous-phase ...stability (data retention) presents a key challenge. We control the crystallization kinetics of a phase-change material by applying a constant low voltage via prestructural ordering (incubation) effects. A crystallization speed of 500 picoseconds was achieved, as well as high-speed reversible switching using 500-picosecond pulses. Ab initio molecular dynamics simulations reveal the phase-change kinetics in PCRAM devices and the structural origin of the incubation-assisted increase in crystallization speed. This paves the way for achieving a broadly applicable memory device, capable of nonvolatile operations beyond gigahertz data-transfer rates.
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Ge-Sb-Te materials are used in optical DVDs and non-volatile electronic memories (phase-change random-access memory). In both, data storage is effected by fast, reversible phase changes between ...crystalline and amorphous states. Despite much experimental and theoretical effort to understand the phase-change mechanism, the detailed atomistic changes involved are still unknown. Here, we describe for the first time how the entire write/erase cycle for the Ge(2)Sb(2)Te(5) composition can be reproduced using ab initio molecular-dynamics simulations. Deep insight is gained into the phase-change process; very high densities of connected square rings, characteristic of the metastable rocksalt structure, form during melt cooling and are also quenched into the amorphous phase. Their presence strongly facilitates the homogeneous crystal nucleation of Ge(2)Sb(2)Te(5). As this simulation procedure is general, the microscopic insight provided on crystal nucleation should open up new ways to develop superior phase-change memory materials, for example, faster nucleation, different compositions, doping levels and so on.
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'Phase-change' memory materials, such as the canonical composition Ge2Sb2Te5, are being actively researched for non-volatile resistive random-access memory applications. In these devices, ultra-rapid ...reversible transformations between metastable highly electrically conducting (degenerate-semiconducting) crystalline and more electrically resistive (semiconducting) glassy phases are produced by the application of appropriate voltage pulses. Multilevel programming, wherein more than two metastable resistance states can be stored in the memory material as different proportions of partially glassy/crystalline regions, allows more than one bit to be stored per memory cell. However, this route to increasing data density, without recourse to device-size down-scaling, is threatened by the phenomenon of 'resistance drift', wherein the electrical resistance of the glassy phase slowly increases with time, following a weak power-law dependence, after being written with a voltage pulse. In this paper, we propose an intrinsic electronic mechanism for the resistance drift, particularly valid at ambient temperature and below, by identifying it with the phenomenon of persistent photoconductivity that is commonly observed in a wide range of disordered semiconductors. We develop a model for it in terms of the long-time, deep-trap release and subsequent recombination of charge carriers, akin to that which is believed to be responsible for the long-time photocurrent decay in amorphous semiconductors, such as hydrogenated amorphous silicon. In this case, the parameters controlling the resistance drift are the widths of the (localized) valence- and conduction-band tails in the vicinity of the bandgap. Hence, there is the potential for mitigating resistance drift in the amorphous state of phase-change memory materials by suitable material engineering (e.g. via compositional or fabricational control) to control the extent of band-tailing, thereby facilitating the future introduction of multistate memory.
The concept of hypervalency emerged as a notion for chemical bonding in molecules to explain the atomic coordination in hypervalent molecules that violates the electron-octet rule. Despite its ...significance, however, hypervalency in condensed phases, such as amorphous solids, remains largely unexplored. Using ab initio molecular-dynamics simulations, we report here the underlying principles of hypervalency in amorphous chalcogenide materials, in terms of the behaviour of hypervalent structural units, and its implicit relationship with material properties. The origin of a material-dependent tendency towards hypervalency is made evident with the multi-centre hyperbonding model, from which its relationship to abnormally large Born effective charges is also unambiguously revealed. The hyperbonding model is here extended to include interactions with cation s
lone pairs (LPs); such deep-lying LPs can also play a significant role in determining the properties of these chalcogenide materials. The role of hypervalency constitutes an indispensable and important part of chemical interactions in amorphous and crystalline chalcogenide solids.
A review of some properties of chalcogenide glasses and the current status of their applications is given. Techniques to characterize the linear and non-linear properties of these glasses are ...introduced and used to measure the optical constants of chalcogenide glasses in the form of bulk, thin film and fiber. Different techniques for the fabrication of gratings and waveguides in these glasses are described. Achievable efficiencies of gratings, as well as propagation losses of fabricated waveguides, are presented. The possibilities of fabricating active devices, such as fiber amplifiers and lasers, are presented. Finally, a novel application of chalcogenide glasses, namely all-optical switching for the fabrication of efficient femtosecond switches, is introduced.
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GEOZS, IJS, IMTLJ, KILJ, KISLJ, NUK, OILJ, PNG, SAZU, SBCE, SBJE, UL, UM, UPCLJ, UPUK
The coherent elastic scattering of neutrinos off nuclei has eluded detection for four decades, even though its predicted cross section is by far the largest of all low-energy neutrino couplings. This ...mode of interaction offers new opportunities to study neutrino properties and leads to a miniaturization of detector size, with potential technological applications. We observed this process at a 6.7σ̃ confidence level, using a low-background, 14.6-kilogram CsINa scintillator exposed to the neutrino emissions from the Spallation Neutron Source at Oak Ridge National Laboratory. Characteristic signatures in energy and time, predicted by the standard model for this process, were observed in high signal-to-background conditions. Improved constraints on nonstandard neutrino interactions with quarks are derived from this initial data set.
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Cosmogenic activation of silicon Saldanha, R.; Thomas, R.; Tsang, R. H. M. ...
Physical review. D,
11/2020, Volume:
102, Issue:
10
Journal Article
Peer reviewed
Open access
The production of 3H, 7Be, and 22Na by interactions of cosmic-ray particles with silicon can produce radioactive backgrounds in detectors used to search for rare events. Through controlled ...irradiation of silicon CCDs and wafers with a neutron beam that mimics the cosmic-ray neutron spectrum, followed by direct counting, we determined that the production rate from cosmic-ray neutrons at sea level is ( 112 ± 24 ) atoms / ( kg day ) for 3H, ( 8.1 ± 1.9 ) atoms / ( kg day ) for 7Be, and ( 43.0 ± 7.2 ) atoms / ( kg day ) for 22Na. Complementing these results with the current best estimates of activation cross sections for cosmic-ray particles other than neutrons, we obtain a total sea-level cosmic-ray production rate of ( 124 ± 25 ) atoms / ( kg day ) for 3H, ( 9.4 ± 2.0 ) atoms / ( kg day ) for 7Be, and ( 49.6 ± 7.4 ) atoms / ( kg day ) for 22Na. These measurements will help constrain background estimates and determine the maximum time that silicon-based detectors can remain unshielded during detector fabrication before cosmogenic backgrounds impact the sensitivity of next-generation rare-event searches.
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Ge-Sb-Te materials are used in optical DVDs and non-volatile electronic memories (phase-change random-access memory). In both, data storage is effected by fast, reversible phase changes between ...crystalline and amorphous states. Despite much experimental and theoretical effort to understand the phase-change mechanism, the detailed atomistic changes involved are still unknown. Here, we describe for the first time how the entire write/erase cycle for the Ge(2)Sb(2)Te(5) composition can be reproduced using ab initio molecular-dynamics simulations. Deep insight is gained into the phase-change process; very high densities of connected square rings, characteristic of the metastable rocksalt structure, form during melt cooling and are also quenched into the amorphous phase. Their presence strongly facilitates the homogeneous crystal nucleation of Ge(2)Sb(2)Te(5). As this simulation procedure is general, the microscopic insight provided on crystal nucleation should open up new ways to develop superior phase-change memory materials, for example, faster nucleation, different compositions, doping levels and so on.
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Objective
Dysbiosis of the infant gut microbiota may have long‐term health consequences. This study aimed to determine the impact of maternal intrapartum antibiotic prophylaxis (IAP) on infant gut ...microbiota, and to explore whether breastfeeding modifies these effects.
Design
Prospective pregnancy cohort of Canadian infants born in 2010–2012: the Canadian Healthy Infant Longitudinal Development (CHILD) Study.
Setting
General community.
Sample
Representative sub‐sample of 198 healthy term infants from the CHILD Study.
Methods
Maternal IAP exposures and birth method were documented from hospital records and breastfeeding was reported by mothers. Infant gut microbiota was characterised by Illumina 16S rRNA sequencing of faecal samples at 3 and 12 months.
Main outcome measures
Infant gut microbiota profiles.
Results
In this cohort, 21% of mothers received IAP for Group B Streptococcus prophylaxis or pre‐labour rupture of membranes; another 23% received IAP for elective or emergency caesarean section (CS). Infant gut microbiota community structures at 3 months differed significantly with all IAP exposures, and differences persisted to 12 months for infants delivered by emergency CS. Taxon‐specific composition also differed, with the genera Bacteroides and Parabacteroides under‐represented, and Enterococcus and Clostridium over‐represented at 3 months following maternal IAP. Microbiota differences were especially evident following IAP with emergency CS, with some changes (increased Clostridiales and decreased Bacteroidaceae) persisting to 12 months, particularly among non‐breastfed infants.
Conclusions
Intrapartum antibiotics in caesarean and vaginal delivery are associated with infant gut microbiota dysbiosis, and breastfeeding modifies some of these effects. Further research is warranted to explore the health consequences of these associations.
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Maternal #antibiotics during childbirth alter the infant gut #microbiome.
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Maternal #antibiotics during childbirth alter the infant gut #microbiome.
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BFBNIB, FZAB, GIS, IJS, KILJ, NLZOH, NUK, OILJ, SBCE, SBMB, UL, UM, UPUK
The Baksan Experiment on Sterile Transitions (BEST) was designed to investigate the deficit of electron neutrinos νe observed in previous gallium-based radiochemical measurements with high-intensity ...neutrino sources, commonly referred to as the "gallium anomaly," which could be interpreted as evidence for oscillations between νe and sterile neutrino (νs) states. A 3.414-MCi 51Cr νe source was placed at the center of two nested Ga volumes and measurements were made of the production of 71Ge through the charged current reaction, 71Ga(νe,e-)71Ge, at two average distances. The measured production rates for the inner and the outer targets, respectively, are 54.9$_{-2.4}^{+2.5}$(stat)±1.4(syst) and 55.6$_{-2.6}^{+2.7}$(stat)±1.4(syst) atoms of 71Ge/d. The ratio (R) of the measured rate of 71Ge production at each distance to the expected rate from the known cross section and experimental efficiencies are Rin=0.79±0.05 and Rout=0.77±0.05. The ratio of the outer to the inner result is 0.97±0.07, which is consistent with unity within uncertainty. The rates at each distance were found to be similar, but 20%-24% lower than expected, thus reaffirming the anomaly. Therefore these results are consistent with νe→νs oscillations with a relatively large Δm2 (> 0.5 eV2) and mixing sin22θ (≈0.4).
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