Zlokazov and Utyonkov (2017 J. Phys. G: Nucl. Part. Phys. 44 075107) question the validity of the methods and conclusions presented by Forsberg et al (2016 Nucl. Phys. A 953 117). In this comment, we ...argue that the criticism is invalid.
The spectroscopic quadrupole moment of the first 2+ state of 12C has been measured employing the Coulomb-excitation re-orientation technique. Our result of Qs(21+)=+9.3−3.8+3.5efm2 suggests a larger ...oblate deformation than previously reported. Combining this with the consistently re-analyzed adopted value, we present the most precise value to date of Qs(21+)=+9.5(18)efm2, which is consistent with a geometrical rotor description. This simple outcome is compared to state-of-the-art shell-model, mean-field, ab initio calculations, cluster-based and geometrical-like theories, which show varying degrees of emergent quadrupole collectivity.
Full text
Available for:
GEOZS, IJS, IMTLJ, KILJ, KISLJ, NLZOH, NUK, OILJ, PNG, SAZU, SBCE, SBJE, UILJ, UL, UM, UPCLJ, UPUK, ZAGLJ, ZRSKP
A novel rigorous statistical treatment is applied to available data (May 9, 2016) from search and spectroscopy experiments on the elements with atomic numbers Z=115 and Z=117. The present analysis ...implies that the hitherto proposed cross-reaction link between α-decay chains associated with the isotopes 293117 and 289115 is highly improbable.
Full text
Available for:
GEOZS, IJS, IMTLJ, KILJ, KISLJ, NLZOH, NUK, OILJ, PNG, SAZU, SBCE, SBJE, UILJ, UL, UM, UPCLJ, UPUK, ZAGLJ, ZRSKP
Abstract
A recoil-beta-tagging experiment has been performed to study the excited
$$T=0$$
T
=
0
and
$$T=1$$
T
=
1
states in the odd–odd
$$N=Z$$
N
=
Z
nucleus
$$^{94}$$
94
Ag, populated via the
...$$^{40}$$
40
Ca(
$$^{58}$$
58
Ni,1p3n)
$$^{94}$$
94
Ag reaction. The experiment was conducted using the MARA recoil separator and JUROGAM3 array at the Accelerator Laboratory of the University of Jyväskylä. Through correlating fast, high-energy beta decays at the MARA focal plane with prompt
$$\gamma $$
γ
rays emitted at the reaction target, a number of transitions between excited states in
$$^{94}$$
94
Ag have been identified. The timing characteristics of these transitions confirm that they fall within decay sequences that feed the short-lived
$$T=1$$
T
=
1
ground state of
$$^{94}$$
94
Ag. The transitions are proposed to proceed within and between the sets of states with
$$T=0$$
T
=
0
and
$$T=1$$
T
=
1
. Possible correspondence between some of these transitions from analog states in
$$^{94}$$
94
Pd has been discussed, and shell-model calculations including multipole and monopole electromagnetic effects have been presented, in order to enable predictions of the decay patterns between the
$$T=0$$
T
=
0
and
$$T=1$$
T
=
1
states and to allow a theoretical set of Coulomb energy differences to be calculated for the
$$A = 94$$
A
=
94
$$T=1$$
T
=
1
analog states.
Full text
Available for:
DOBA, EMUNI, FIS, FZAB, GEOZS, GIS, IJS, IMTLJ, IZUM, KILJ, KISLJ, MFDPS, NLZOH, NUK, OILJ, PILJ, PNG, SAZU, SBCE, SBJE, SBMB, SBNM, SIK, UILJ, UKNU, UL, UM, UPUK, VKSCE, ZAGLJ
Currently, up to 50% of the channel temperature in AlGaN/GaN electronic devices is due to the thermal-boundary resistance (TBR) associated with the nucleation layer (NL) needed between GaN and SiC ...substrates for high-quality heteroepitaxy. Using 3-D time-resolved Raman thermography, it is shown that modifying the NL used for GaN on SiC epitaxy from the metal-organic chemical vapor deposition (MOCVD)-grown standard AlN-NL to a hot-wall MOCVD-grown AlN-NL reduces NL TBR by 25%, resulting in ~10% reduction of the operating temperature of AlGaN/GaN HEMTs. Considering the exponential relationship between device lifetime and temperature, lower TBR NLs open new opportunities for improving the reliability of AlGaN/GaN devices.
Masses of 52Co, 52Com, 52Fe, 52Fem, and 52Mn have been measured with the JYFLTRAP double Penning trap mass spectrometer. The isobaric multiplet mass equation for the T = 2 quintet at A = 52 has been ...studied employing the new mass values. No significant breakdown (beyond the 3 level) of the quadratic form of the IMME was observed ( χ 2 n = 2.4 ). The cubic coefficient was 6.0(32) keV ( χ 2 n = 1.1 ). The excitation energies for the isomer and the T = 2 isobaric analog state in 52Co have been determined to be 374(13) keV and 2922(13) keV, respectively. The measured mass values for 52Co and 52Com are 29(10) keV and 16(15) keV higher, respectively, than obtained in a recent storage-ring experiment, and significantly lower than predicted by extrapolations. Consequently, this has an impact on the proton separation energies for 52Co and 53Ni relevant for the astrophysical rapid proton capture process. The Q value for the proton decay from the 19 2 − isomer in 53Co has been determined with an unprecedented precision, Q p = 1558.8 ( 17 ) keV.
We demonstrated successful growth of AlN at a temperature of 1200 °C in a set of hot-wall MOCVD systems with the possibility of straightforward scaling up the process on larger wafer areas to meet ...the demand of device technologies. We outlined several aspects of the carefully optimized design and process parameters with relevance to achievement of a high overall growth rate (1 and up to 2 μm/h), efficiency, and uniformity, which to a great extent depends on how consumption of growth-limiting species by gas-phase adduct formation can actively be prevented. Mixing of the precursors upstream from the deposition area facilitates uniform epitaxial growth, while the greater uniformity of substrate temperature inherent to the hot-wall reactor and rotation of the wafer are of fundamental importance for layer-growth uniformity. The AlN layer thickness can be controlled with an accuracy of ±1.3% on 2 in. wafers. The low-temperature cathodoluminescence spectrum of the AlN epitaxial material is strongly dominated by the intense near band-gap deep UV emission at about 208 nm.
Full text
Available for:
IJS, KILJ, NUK, PNG, UL, UM
PDF
