Objective. To date, few studies are available on autoimmune liver disease-associated acute-on-chronic liver failure (ACLF). The aim of this study is to investigate bacterial infection and predictors ...of mortality in these patients. Methods. We retrospectively studied patients with autoimmune liver disease from August 2012 to August 2017. Clinical data of the patients were retrieved for analysis. Results. There were 53 ACLF patients and 53 patients without ACLF in this study. The ACLF group had a higher prevalence of complications (P<0.05). The 28-day and 90-day mortality rates were also obviously high in patients with ACLF (38.3% and 74.5%, resp.) (P<0.05). No predictor was significantly associated with 28-day and 90-day transplant-free mortality. In 53ACLF patients, 40 (75.5%) patients showed bacterial infection. ACLF patients with bacterial infection showed high Child-Pugh score, MELD score, CLIF-SOFA score, 28-day mortality, and 90-day mortality (P>0.05). Moreover, C-reactive protein (CRP) using 12.15 mg/L cut-off value proved to be more accurate than procalcitonin in identifying patients with infection. Conclusions. Autoimmune liver disease-associated ACLF showed more complications and high mortality. Bacterial infection patients displayed a more severe condition than those without infection. Elevated CRP is an accurate marker for diagnosing bacterial infection in autoimmune liver disease-associated ACLF patients.
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FZAB, GIS, IJS, KILJ, NLZOH, NUK, OILJ, SBCE, SBMB, UL, UM, UPUK
We report on demonstrating the first Al 0.05 Ga 0.95 N-channel enhancement-mode (E-mode) p-GaN gate injection transistors (GITs) with an adjustable threshold voltage (<inline-formula> <tex-math ...notation="LaTeX">{V}_{\textsf {T}} </tex-math></inline-formula>) of 4-7-V by controlling the number of source-connected p-GaN bridges. To the best of our knowledge, it is the highest <inline-formula> <tex-math notation="LaTeX">{V}_{T} </tex-math></inline-formula> reported in p-GaN GITs. Comparing with GaN channel, the Al 0.05 Ga 0.95 N channel is used to minimize the polarization difference between channel layer and Al 0.15 Ga 0.85 N barrier layer and also increase the maximum affordable electric field of the channel so as to increase the <inline-formula> <tex-math notation="LaTeX">{V}_{T} </tex-math></inline-formula> and breakdown voltage. Combing with <inline-formula> <tex-math notation="LaTeX">4.3~\mu \text{m} </tex-math></inline-formula>-thick buffer layer, E-mode GITs demonstrate an OFF-state breakdown voltage of 662, 770, 1034, and 1315 V at a gate-to-drain spacing of 5, 7, 11, and <inline-formula> <tex-math notation="LaTeX">19~\mu \text{m} </tex-math></inline-formula>, respectively, showing the great promise of the AlGaN channel E-Mode GITs for future power electronics applications.
Vibrio vulnificus is a common gram-negative bacterium, which might cause morbidity and mortality in patients following consumption of seafood or exposure to seawater in Southeast China. We ...retrospectively analyzed clinical data of patients with laboratory confirmed V. vulnificus infection. Twenty one patients were divided into a survival group and a non-surviving (or death) group according to their clinical outcome. Clinical data and measurements were statistically analyzed. Four patients (19.05%) died and five patients gave positive cultures from bile fluid, and 16 other patients gave positive culture from blood or blisters. Ten patients (47.62%) had an underlying liver disease and marine-related events were found in sixteen patients (76.2%). Patients with heavy drinking habits might be at increased mortality (p = 0.028). Clinical manifestations of cellulitis (47.6%), septic shock (42.9%) and multiple organ failure (28.6%) were statistically significant when comparing survivors and non-survivors (p = 0.035, p = 0.021 and p = 0.003, respectively). The laboratory results, including hemoglobin < 9.0 g/L (p = 0.012), platelets < 2.0 × 109 /L, prothrombin time activity (PTA) <20%, decreased serum creatinine and increased urea nitrogen were statistically significant (p = 0.012, p = 0.003, p = 0.028 and p = 0.028, respectively). Patients may be at a higher risk of mortality under situations where they have a history of habitual heavy alcoholic drink consumption (p = 0.028, OR = 22.5, 95%CI 1.5-335.3), accompanied with cellulitis, shock, multiple organ failure, and laboratory examinations that are complicated by decreased platelets, hemoglobin and significantly prolonged prothrombin time (PT).
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DOBA, IZUM, KILJ, NUK, PILJ, PNG, SAZU, SIK, UILJ, UKNU, UL, UM, UPUK
Perovskite solar cells (PSCs) have attracted increasing attention in the past decade due to their outstanding photovoltaic performances. However, previous researches mainly focused on small-area ...PSCs, which do not meet the demand for large-scale production and commercial applications. Commonly used spin coating in small-area PSCs is not suitable; whereas meniscus coating is becoming the most promising scalable technique for fabricating large-area PSCs due to its special advantages. In this review, we first introduce the structure and advantages of meniscus coating. In particular, we explain the nucleation and crystal growth process of perovskite during the meniscus coating process. Then we systematically analyze the key factors for improving the photovoltaic performances and stability of large-area PSCs. With an understanding of the key factors, we summarize a number of strategies for fabricating large-area PSCs with high efficiency and stability based on meniscus coating. The strategies include optimizing the crystallinity and morphology of perovskite films, use of additives, chemical composition engineering of perovskite, interfacial engineering, use of 2D perovskite, optimization of the charge transport layers, barrier designs and encapsulations. We believe that meniscus coating will be the most important and efficient approach for fabricating large-area PSCs and pave the way to commercialization of PSCs in the future.
We believe that meniscus coating will be the most promising and applicable approach for fabricating large-area PSCs and pave the way to commercialization of PSCs in the future.
In this letter, we demonstrated Formula Omitted-Ga2O3 lateral Schottky barrier diodes (SBDs) with breakdown voltage (BV) over 10 kV via anode engineering techniques. Post-anode deposition annealing ...(PAA) was implemented to enhance the Schottky barrier height (SBH) to minimize the leakage current and suppress the interface state density (Formula Omitted by over 1 order of magnitude. It is found that the Formula Omitted was extracted to be only Formula Omitted cmFormula OmittedeVFormula Omitted at the energy level near the conduction band after the PAA treatment. Benefiting from the PAA and the coupled as well as the carefully designed dual field-plate (FP) structure, the BV of the SBD was enhanced from about 4 kV to over 10 kV while the turn-on voltage (Formula Omitted for those SBDs remained approximately at 1 V. These findings show the immense potential of anode engineered Ga2O3 diodes for future high-voltage and high-power electronic systems.
In this work, we have achieved novel lateral enhancement-mode (E-M) and depletion-mode (D-M) β-Ga 2 O 3 metal-oxide-semiconductor junction field-effect-transistors (MOS-JFETs) featuring a low gate ...leakage current (I G ) and a large gate swing. Ascribing to the high-quality SiO 2 layer above the P-NiO X /N-Ga 2 O 3 heterojunction (HJ), the I G was suppressed for over 6 orders of magnitudes when compared with the heterojunction FET (HJ-FET). An off-state drain current of ~10 -7 mA/mm was also achieved at elevated temperature (T) up to 200 °C, indicating strong thermal stability of our device. The depletion-mode (D-M) MOS-JFET with source-to-drain spacing (L SD ) of 12 μm demonstrates a breakdown voltage (BV) of 1.32 kV and specific on-resistance (R on,sp ) of 4.4 mΩ∙cm 2 , delivering a high Baliga's power figure of merit (PFOM) of 405 MW/cm 2 . Due to the potential of β-Ga 2 O 3 MOS-JFET in power electronics, these findings offer a compel ling pathway for future high-power and high-efficiency systems.
This study analyzed the effectiveness of temporary emission control measures on air quality of Nanjing, China during the Jiangsu Development Summit (JDS). We employed a regional chemistry model ...WRF-Chem to simulate air pollutants in Nanjing and compared the results to surface observations and satellite retrievals. During the JDS, air pollutant emissions from industry and transportation sectors largely decreased by 50–67% due to the short-term emission control measures such as reducing coal combustions, shutting down factories, and partially limiting traffic. Benefiting from the emission control, the simulated concentrations of PM
2.5
, NO
2
, SO
2
, CO and VOCs in Nanjing decreased by 17%, 20%, 20%, 19%, and 15% respectively, consistent with the surface and satellite observations. However, both the observed and simulated O
3
increased by 3–48% during the JDS, which was mainly due to the remarkable NO
x
emission reduction (26%) in the downtown of Nanjing where the O
3
production regime was mainly VOC-controlled. In addition, the atmospheric oxidation capacity and further the sulfur oxidation ratio, were facilitated by the elevated O
3
, which led to variable mitigation efficiencies of different secondary PM
2.5
compositions. Our study offers an opportunity for understanding the coordinated control of PM
2.5
and O
3
in typical city clusters, and can provide implications for future mitigation actions.
We numerically and experimentally demonstrated double Fano resonances in a simple S-shaped plasmonic metasurface in the terahertz frequency range. Apart from the electric-LC resonance and electric ...dipole (ED) resonance, two trapped modes are excited in two different types of asymmetric S-shaped structures in the frequency range 0.2–1.4 THz, which are mainly attributed to a magnetic dipole (MD) and an electric quadrupole (EQ). Thereafter, double Fano resonances one Fano and one electromagnetically induced transparency (EIT) resonance are achieved via the coupling of the two dark trapped modes and a broad bright ED at normal incidence of the metasurfaces. Furthermore, under oblique incidence, strong Fano responses can be observed; they are considerably enhanced in asymmetric structures, and even in a symmetric structure. The proposed S-shaped plasmonic metasurfaces are easy to fabricate and have potential applications in multi-wavelength optical switches, filters, and sensors.
In this article, we report on demonstrating high-performance AlGaN/GaN high-electron-mobility-transistor (HEMT) on free-standing GaN (FS-GaN) substrate with low contact resistance (<inline-formula> ...<tex-math notation="LaTeX">{R}_{C} </tex-math></inline-formula>) and high breakdown voltage (BV). Non-regrowth <inline-formula> <tex-math notation="LaTeX">{R}_{C} </tex-math></inline-formula> as low as <inline-formula> <tex-math notation="LaTeX">0.23 \Omega \cdot </tex-math></inline-formula>mm was achieved by using the self-aligned Ohmic etching process and nonfield plated BV as high as 193 V was also acquired due to the low dislocation density of the epi-layer on FS-GaN substrate. It is found that the reduction of the <inline-formula> <tex-math notation="LaTeX">{R}_{C} </tex-math></inline-formula> is induced by the smaller electron tunneling width across the AlGaN barrier layer, rather than the formation of dislocation related metal spikes. The fabricated GaN HEMT was a peak extrinsic transconductance (<inline-formula> <tex-math notation="LaTeX">{g}_{m} </tex-math></inline-formula>) of 203 mS/mm and a drain current (<inline-formula> <tex-math notation="LaTeX">{I}_{D} </tex-math></inline-formula>) ON/OFF ratio of 10 6 -10 7 . Benefited from the low <inline-formula> <tex-math notation="LaTeX">{R}_{C} </tex-math></inline-formula>, a cut-off frequency/maximum oscillation frequency (<inline-formula> <tex-math notation="LaTeX">{f}_{T}/{f}_{max} </tex-math></inline-formula>) of 26/73 GHz was extracted at a gate length (<inline-formula> <tex-math notation="LaTeX">{L}_{g} </tex-math></inline-formula>) of 600 nm, yielding a <inline-formula> <tex-math notation="LaTeX">{f}_{T}\cdot {L}_{g} </tex-math></inline-formula> value of 15.6 GHz<inline-formula> <tex-math notation="LaTeX">\cdot \mu \text{m} </tex-math></inline-formula> and a Johnson's figure-of-merit (J-FOM) of 5.0 THz<inline-formula> <tex-math notation="LaTeX">\cdot \text{V} </tex-math></inline-formula>, which are the highest values among all AlGaN/GaN HEMTs on FS-GaN substrate. This work implies that GaN HEMTs on FS-GaN substrate with low <inline-formula> <tex-math notation="LaTeX">{R}_{C} </tex-math></inline-formula> turn out to be a promising candidate for high-performance radio frequency (RF) power device applications.
In this work, device parameters for GaN vertical trench MOSFETs have been investigated systematically to further improve the device characteristics. The n- GaN drift layer, the p+ GaN layer and the ...trench gate are designed and optimized systematically using Silvaco ATLAS 2-D simulation, in order to get the best trade-off between VBR and specific on-resistance Ron. Three-terminal breakdown curves, the electron concentration, current density and electric field strength distributions have been presented to analyze the breakdown characteristics. The correlations between different parameters and different initial conditions are considered, and the eight parameters are optimized comprehensively. After the final optimization, record high FOM of 4.8 GW/cm2, VBR of 2783 V, average electric field Edrift of 1.98 MV/cm and a low Ron of 1.6 mΩ·cm2 are obtained for drift layer thickness of 14 μm. The product of the thickness Lp and doping density Np of p+ GaN layer can determine the breakdown mechanism, and punch through mechanism would occur when Lp·Np is lower than a certain value. The results indicate there exists large optimization room for fabricated GaN vertical trench MOSFETs, and the device characteristics can be further improved through the methodology in this paper for high power and high voltage applications.
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