Energy upconversion via optical processes in semiconductor nanowires (NWs) is attractive for a variety of applications in nano-optoelectronics and nanophotonics. One of the main challenges is to ...achieve a high upconversion efficiency and, thus, a wide dynamic range of device performance, allowing efficient upconversion even under low excitation power. Here, we demonstrate that the efficiency of energy upconversion via two-photon absorption (TPA) can be drastically enhanced in core/shell NW heterostructures designed to provide a real intermediate TPA step via the band states of the narrow-bandgap region with a long carrier lifetime, fulfilling all the necessary requirements for high-efficiency two-step TPA. We show that, in radial GaAs(P)/GaNAs(P) core/shell NW heterostructures, the upconversion efficiency increases by 500 times as compared with that of the constituent materials, even under an excitation power as low as 100 mW/cm2 that is comparable to the 1 sun illumination. The upconversion efficiency can be further improved by 8 times through engineering the electric-field distribution of the excitation light inside the NWs so that light absorption is maximized within the desired region of the heterostructure. This work demonstrates the effectiveness of our approach in providing efficient photon upconversion by exploring core/shell NW heterostructures, yielding an upconversion efficiency being among the highest reported in semiconductor nanostructures. Furthermore, our work provides design guidelines for enhancing efficiency of energy upconversion in NW heterostructures.
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Core/shell nanowire (NW) heterostructures based on III-V semiconductors and related alloys are attractive for optoelectronic and photonic applications owing to the ability to modify their electronic ...structure via bandgap and strain engineering. Post-growth thermal annealing of such NWs is often involved during device fabrication and can also be used to improve their optical and transport properties. However, effects of such annealing on alloy disorder and strain in core/shell NWs are not fully understood. In this work we investigate these effects in novel core/shell/shell GaAs/GaNAs/GaAs NWs grown by molecular beam epitaxy on (111) Si substrates. By employing polarization-resolved photoluminescence measurements, we show that annealing (i) improves overall alloy uniformity due to suppressed long-range fluctuations in the N composition; (ii) reduces local strain within N clusters acting as quantum dot emitters; and (iii) leads to partial relaxation of the global strain caused by the lattice mismatch between GaNAs and GaAs. Our results, therefore, underline applicability of such treatment for improving optical quality of NWs from highly-mismatched alloys. They also call for caution when using ex-situ annealing in strain-engineered NW heterostructures.
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Nanowire (NW) lasers operating in the near-infrared spectral range are of significant technological importance for applications in telecommunications, sensing, and medical diagnostics. So far, lasing ...within this spectral range has been achieved using GaAs/AlGaAs, GaAs/GaAsP, and InGaAs/GaAs core/shell NWs. Another promising III–V material, not yet explored in its lasing capacity, is the dilute nitride GaNAs. In this work, we demonstrate, for the first time, optically pumped lasing from the GaNAs shell of a single GaAs/GaNAs core/shell NW. The characteristic “S”-shaped pump power dependence of the lasing intensity, with the concomitant line width narrowing, is observed, which yields a threshold gain, g th , of 3300 cm–1 and a spontaneous emission coupling factor, β, of 0.045. The dominant lasing peak is identified to arise from the HE21b cavity mode, as determined from its pronounced emission polarization along the NW axis combined with theoretical calculations of lasing threshold for guided modes inside the nanowire. Even without intentional passivation of the NW surface, the lasing emission can be sustained up to 150 K. This is facilitated by the improved surface quality due to nitrogen incorporation, which partly suppresses the surface-related nonradiative recombination centers via nitridation. Our work therefore represents the first step toward development of room-temperature infrared NW lasers based on dilute nitrides with extended tunability in the lasing wavelength.
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III-V semiconductor nanowires (NWs), such as those based on GaAs, are attractive for advanced optoelectronic and nanophotonic applications. The addition of Bi into GaAs offers a new avenue to enhance ...the near-infrared device performance and to add new functionalities, by utilizing the remarkable valence band structure and the giant bowing in the bandgap energy. Here, we report that alloying with Bi also induces the formation of optically-active self-assembled nanodisks caused by Bi segregation. They are located in the vicinity to the 〈112〉 corners of the GaAsBi shell and are restricted to twin planes. Furthermore, the Bi composition in the disks is found to correlate with their lateral thickness. The higher Bi composition in the disks with respect to the surrounding matrix provides a strong confinement for excitons along the NW axis, giving rise to narrow emission lines (<450 μeV) with the predominant emission polarization orthogonal to the NW axis. Our findings, therefore, open a new possibility to fabricate self-assembled quantum structures by combining advantages of dilute bismide alloys and lattice engineering in nanowires.
The formation of self-assembled nanodisks open up new avenue for designing novel quantum structures by utilizing a dilute bismide.
Photon energy upconversion, i.e. the conversion of several low-energy photons to a photon of higher energy, offers significant potential for nano-optoelectronics and nanophotonics applications. The ...primary challenge is to achieve high upconversion efficiency and a broad device performance range, enabling effective upconversion even at low excitation power. This study demonstrates that core/shell semiconductor nanowire heterostructures can exhibit upconversion efficiencies exceeding what was previously reported for semiconductor nanostructures even at a low excitation power of 100 mW/cm
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, by a two-photon absorption process through conduction band states of the narrow-bandgap nanowire shell region. By engineering the electric-field distribution of the excitation light inside the NWs, upconversion efficiency can be further improved by eight times. This work showcases the effectiveness of the proposed approach in achieving efficient photon upconversion using core/shell NW heterostructures, resulting in some of the highest upconversion efficiencies reported in semiconductor nanostructures. Additionally, it offers design guidelines for enhancing energy upconversion efficiency.
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This study presents the transmission of SARS-CoV-2 in the main types of public transport vehicles and stations to comparatively assess the relative theoretical risk of infection of travelers. The ...presented approach benchmarks different measures to reduce potential exposure in public transport and compares the relative risk between different means of transport and situations encountered. Hence, a profound base for the selection of measures by operators, travelers and staff is provided. Zonal modeling is used as the simulation method to estimate the exposure to passengers in the immediate vicinity as well as farther away from the infected person. The level of exposure to passengers depends on parameters such as the duration of stay and travel profile, as well as the ventilation situation and the wearing of different types of masks. The effectiveness of technical and behavioral measures to minimize the infection risk is comparatively evaluated. Putting on FFP2 (N95) masks and refraining from loud speech decreases the inhaled viral load by over 99%. The results show that technical measures, such as filtering the recirculated air, primarily benefit passengers who are a few rows away from the infected person by reducing exposure 84–91%, whereas near-field exposure is only reduced by 30–69%. An exception is exposure in streetcars, which in the near-field is 17% higher due to the reduced air volume caused by the filter. Thus, it can be confirmed that the prevailing measures in public transport protect passengers from a high theoretical infection risk. At stations, the high airflows and the large air volume result in very low exposures (negligible compared to the remaining means of transport) provided that distance between travelers is kept. The comparison of typical means of transport indicates that the inhaled quanta dose depends primarily on the duration of stay in the vehicles and only secondarily on the ventilation of the vehicles. Due to the zonal modeling approach, it can also be shown that the position of infected person relative to the other passengers is decisive in assessing the risk of infection.
Cathodoluminescence (CL) and micro-photoluminescence spectroscopies are employed to investigate effects of structural defects on carrier recombination in GaNAsP nanowires (NWs) grown by molecular ...beam epitaxy on Si substrates. In the NWs with a low N content of 0.08%, these defects are found to promote non-radiative (NR) recombination, which causes spatial variation of the CL peak position and its intensity. Unexpectedly, these detrimental effects can be suppressed even by a small increase in the nitrogen composition from 0.08% to 0.12%. This is attributed to more efficient trapping of excited carriers/excitons to the localized states promoted by N-induced localization and also the presence of other NR channels. At room temperature, the structural defects no longer dominate in carrier recombination even in the NWs with the lower nitrogen content, likely due to increasing importance of other recombination channels. Our work underlines the need in eliminating important thermally activated NR defects, other than the structural defects, for future optoelectronic applications of these NWs.
In this work, we carry out a comprehensive investigation of structural and optical effects in GaNAsP nanowires (NWs), which are novel materials promising for advanced photovoltaic applications. ...Despite a significant mismatch in electronegativity between N and As/P atoms, we show that incorporation of nitrogen does not degrade structural quality of the nanowires and the fabricated NW arrays have excellent compositional uniformity among individual wires. From temperature-dependent photoluminescence (PL) measurements, statistical fluctuations of the alloy composition are shown to lead to localization of photoexcited carriers at low temperatures but do not affect material properties at room temperature. According to time-resolved PL measurements, the room-temperature carrier lifetime increases in the GaNAsP NWs as compared with the GaAsP NWs, which indicates reduced nonradiative recombination. Moreover, in spite of the very low N content in the studied NWs (up to 0.16%), their bandgap energy can be tuned by more than 100 meV. This is accompanied by about 30% reduction in the temperature dependence of the bandgap energy. The presented results demonstrate that alloying of GaAsP with nitrogen provides an additional means of design optimization, beneficial for, e.g., NW-based intermediate band solar cells that are highly dependent on the optimum bandgap structure.
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Skeletal dysplasia (SD) conditions are rare genetic diseases of the skeleton, encompassing a heterogeneous group of over 400 disorders, and represent approximately 5% of all congenital anomalies. ...Developments in genetic and treatment technologies are leading to unparalleled therapeutic advances; thus, it is more important than ever to molecularly confirm SD conditions. Data on 'rates-of-molecular yields' in SD conditions, through exome sequencing approaches, is limited. Figures of 39% and 52.5% have been reported in the USA (n = 54) and South Korea (n = 185) respectively.
We discuss a single-centre (in the UK) experience of whole-exome sequencing (WES) in a cohort of 15 paediatric patients (aged 5 months to 12 years) with SD disorders previously molecularly unconfirmed. Our cohort included patients with known clinical diagnoses and undiagnosed skeletal syndromes. Extensive phenotyping and expert radiological review by a panel of international SD radiology experts, coupled with a complex bioinformatics pipeline, allowed for both gene-targeted and gene-agnostic approaches.
Significant variants leading to a likely or confirmed diagnosis were identified in 53.3% (n = 8/15) of patients; 46.7% (n = 7/15) having a definite molecular diagnosis and 6.7% (n = 1/15) having a likely molecular diagnosis. We discuss this in the context of a rare disease in general and specifically SD presentations. Of patients with known diagnoses pre-WES (n = 10), molecular confirmation occurred in 7/10 cases, as opposed to 1/5 where a diagnosis was unknown pre-test. Thus, diagnostic return is greatest where the diagnosis is known pre-test. For WGS (whole genome sequencing, the next iteration of WES), careful case selection (ideally of known diagnoses pre-test) will yield highest returns.
Our results highlight the cost-effective use of WES-targeted bioinformatic analysis as a diagnostic tool for SD, particularly patients with presumed SD, where detailed phenotyping is essential. Thorough co-ordinated clinical evaluation between clinical, radiological, and molecular teams is essential for improved yield and clinical care. WES (and WGS) yields will increase with time, allowing faster diagnoses, avoiding needless investigations, ensuring individualised patient care and patient reassurance. Further diagnoses will lead to increased information on natural history/mechanistic details, and likely increased therapies and clinical trials.
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