Quantum pattern recognition techniques have recently raised attention as potential candidates in analyzing vast amount of data. The necessity to obtain faster ways to process data is imperative where ...data generation is rapid. The ever-growing size of sequence databases caused by the development of high throughput sequencing is unprecedented. Current alignment methods have blossomed overnight but there is still the need for more efficient methods that preserve accuracy in high levels. In this work, a complex method is proposed to treat the alignment problem better than its classical counterparts by means of quantum computation. The basic principal of the standard dot-plot method is combined with a quantum algorithm, giving insight into the effect of quantum pattern recognition on pairwise alignment. The central feature of quantum algorithmic -quantum parallelism- and the diffraction patterns of x-rays are synthesized to provide a clever array indexing structure on the growing sequence databases. A completely different approach is considered in contrast to contemporary conventional aligners and a variety of competitive classical counterparts are classified and organized in order to compare with the quantum setting. The proposed method seems to exhibit high alignment quality and prevail among the others in terms of time and space complexity.
Full text
Available for:
IZUM, KILJ, NUK, PILJ, PNG, SAZU, UL, UM, UPUK
In this paper, we introduce a novel coding scheme, which allows single quantum systems to encode multi-qubit registers. This allows for more efficient use of resources and the economy in designing ...quantum systems. The scheme is based on the notion of encoding logical quantum states using the charge degree of freedom of the discrete energy spectrum that is formed by introducing impurities in a semiconductor material. We propose a mechanism of performing single qubit operations and controlled two-qubit operations, providing a mechanism for achieving these operations using appropriate pulses generated by Rabi oscillations. The above architecture is simulated using the Armonk single qubit quantum computer of IBM to encode two logical quantum states into the energy states of Armonk’s qubit and using custom pulses to perform one and two-qubit quantum operations.
Optically controlled self-assembled quantum dots have received substantial attention in the quantum computing area, as techniques for initializing, manipulating, and reading out single spin qubits ...have been demonstrated in essence. The electron-spin coherence and hole-spin coherence are limited due to noisy quantum effects, and there is a significant need for further evaluation and investigation studies. In this work, the behavior of charge noise and spin noise for a fundamental logic unit of four qubit embedded in an AlAs/GaAs heterostructure is reported based on the modeling and simulation approach in the atomic level to provide a more in-depth analysis and evaluation of quantum noise. The numerical calculations are based on reliable simulation methods, which are consistent with experimental results. The approach presented here can become the basis for scaled-up advanced simulations expanding to larger logical blocks of qubits.
The quantum noise encumbrance caused by quantum error-correcting protocols is studied via numerical treatments. Noise evolution implies that the noise magnitude order may change dynamically during ...quantum computations. The rate of noise level deterioration is a function of the computer’s architecture and physical implementation. Various stabilizer codes with small blocks are studied under dynamic noise regimes, which change the noise magnitude order within a specified time period. The Monte-Carlo sampling simulation method is used to determine the survival probabilities for these codes under evolving error rates. A hypothetical q-step quantum algorithm is stabilized by the repeated application of the recovery protocol, and the proposed estimation method is applied. The estimation method is applied concurrently with the execution of the algorithm. The recovery process is simulated with the aid of a software tool that can be parameterized based on the noise model and the encoding error-correction scheme. Examples show the utility of this tool for quantum coding studies.
The quantum phase estimation algorithm has been utilized by a variety of quantum algorithms, most notably Shor’s algorithm, to obtain information regarding the period of a function that is ...appropriately encoded into a unitary operator. In many cases, it is desired to estimate whether a specific state exhibits a certain pattern quickly. In this paper, we exhibit a methodology based on the QPE algorithm to identify certain patterns. In particular, starting from a properly encoded state, we demonstrate how to construct unitary operators whose eigenvectors correspond to states with proper diagonals. QPE will then output an eigenphase equal to zero with certainty for these states, thereby identifying this class of matrices. For partial matches, our algorithm, based on the tolerance threshold used, will show areas of high similarity, and it will outperform classical ones when the number of mismatches defined by the tolerance is significantly low when compared to the size of the diagonal.
Full text
Available for:
EMUNI, FIS, FZAB, GEOZS, GIS, IJS, IMTLJ, KILJ, KISLJ, MFDPS, NLZOH, NUK, OILJ, PNG, SAZU, SBCE, SBJE, SBMB, SBNM, UKNU, UL, UM, UPUK, VKSCE, ZAGLJ
In this paper, we introduce the Multiple-Output Monotonic CMOS (M2CMOS) logic style, which is applied on the design of a high-performance and energy-efficient 64-bit incrementer/decrementer circuit. ...M2CMOS is proposed as an enhancement to standard monotonic-static logic and a viable alternative to domino logic for high-performance applications. A simulation-based comparative analysis at the 32 nm concludes that, compared to other state-of-the-art designs, the proposed incrementer/decrementer achieves the best results in terms of gate/transistor count, delay, energy-delay-product and standby power.
•A new design for the CMOS 64-bit Incrementer/Decrementer circuit is presented.•The proposed circuit utilizes the Multiple-Output Monotonic CMOS (M2CMOS) logic.•Significant improvement is achieved in terms of gate/transistor count, delay, energy-delay-product and standby power.
Full text
Available for:
GEOZS, IJS, IMTLJ, KILJ, KISLJ, NLZOH, NUK, OILJ, PNG, SAZU, SBCE, SBJE, UL, UM, UPCLJ, UPUK, ZRSKP
We propose an architecture based on Quantum Cellular Automata which allows the use of only one type of quantum gate per computational step, using nearest neighbor interactions. The model is built in ...partial steps, each one of them analyzed using nearest neighbor interactions, starting with single-qubit operations and continuing with two-qubit ones. A demonstration of the model is given, by analyzing how the techniques can be used to design a circuit implementing the Quantum Fourier Transform. Since the model uses only one type of quantum gate at each phase of the computation, physical implementation can be easier since at each step only one kind of input pulse needs to be applied to the apparatus.
Full text
Available for:
IZUM, KILJ, NUK, PILJ, PNG, SAZU, UL, UM, UPUK
An ultra-low-power, 55-transistor 8-bit priority encoder is proposed, based on a modified n-type dynamic scheme using feedback from higher- to lower-priority outputs. A comparative study, including ...other designs from literature, is performed on transistor level at 32 and 45 nm predictive technology. The simulation results showed that, compared to the other examined works, the proposed circuit achieves reduction in power dissipation as high as 88% and reduction in power delay product, up to 93.0% while having the smallest transistor count. It is thus proved to be an all-around efficient design in terms of power, performance and area.
Full text
Available for:
BFBNIB, GIS, IJS, KISLJ, NUK, PNG, UL, UM, UPUK
Summary
A novel SRAM architecture that simultaneously accesses multiple and non‐overlapped memory subregions, located even inside the same memory page, is presented in this work. This new memory ...architecture is called multi‐field SRAM, and the multiple selection of its subregions—referred to as the memory fields—is succeeded using special designed intra‐encoders, placed as one for every memory field. The block diagram of the typical SRAM model is extended in order to support the addressing of the multi‐field SRAM using a modified crossbar addressing approach. The support of this new memory is based on the automated generation of intra‐encoders that are adjacent to the memory fields. A test circuit, consisting of 16 memory fields, is developed in order to prove the correct operation of this new memory. Each memory storage cell uses an 8T model in order to support the crossbar addressing scheme, which is also presented. Finally, the simulation results of the test circuit are shown, verifying the successful and simultaneous multi‐field access of the memory.
Full text
Available for:
FZAB, GIS, IJS, KILJ, NLZOH, NUK, OILJ, SBCE, SBMB, UL, UM, UPUK
•Atomic layer deposited zinc oxide (ALD-ZnO) with reduced defect/traps.•ZnO electron extraction layers in inverted organic photovoltaics.•Surface trap passivation enables downward shift of the ...conduction band edge.•Reduced electron extraction barrier in ALD ZnO devices.
Inverted organic photovoltaic (OPV) cells based on poly(3-hexylthiophene (P3HT) as the electron donor and 6,6-phenyl-C71-butyric acid methyl ester (PC71BM) as the electron acceptor, were fabricated and characterized. To improve the photovoltaic performance, ZnO films were used as electron collection layers, while an under-stoichiometric molybdenum oxide MoOx was employed as the hole collection layer. Two types of ZnO layers were employed; one deposited by atomic layer deposition (ALD-ZnO) and another deposited using the sol–gel method (sg-ZnO). OPV cells with a 20nm thick ALD-ZnO layer exhibited significant efficiency enhancement compared with those based on the sg-ZnO layer with the same thickness. The ALD-ZnO film exhibited reduced defect/trap concentration compared with the sg-ZnO counterpart, as confirmed by steady state photoluminescence spectroscopy, showing a promising interface layer for efficient organic photovoltaic devices exhibiting also improved temporal stability. By employing capacitance–voltage measurements we were able to identify a downward shift of the conduction band edge of ALD-ZnO film (or equivalently, an upward shift of the conduction band minimum of the sg-ZnO film), verified also by ultraviolet photoelectron spectroscopy measurements. This resulted in a significant decrease in the electron extraction barrier at the ALD-ZnO/organic active layer interface, as was also demonstrated by the increased current in unipolar (electron only) devices. This work highlights the importance of using the ALD method to develop conformal and defect free ZnO electron collection layers for high performance organic photovoltaics.
Full text
Available for:
GEOZS, IJS, IMTLJ, KILJ, KISLJ, NUK, OILJ, PNG, SAZU, SBCE, SBJE, UL, UM, UPCLJ, UPUK