This systematic review and meta-analysis estimated the global, regional prevalence, and risk factors of osteoporosis. Prevalence varied greatly according to countries (from 4.1% in Netherlands to ...52.0% in Turkey) and continents (from 8.0% in Oceania to 26.9% in Africa). Osteoporosis is a common metabolic bone disorder in the elderly, usually resulting in bone pain and an increased risk of fragility fracture, but few summarized studies have guided global strategies for the disease. Therefore, we pooled the epidemiologic data to estimate the global, regional prevalence, and potential risk factors of osteoporosis. We conducted a comprehensive literature search through PubMed, EMBASE, Web of Science, and Scopus, to identify population-based studies that reported the prevalence of osteoporosis based on the World Health Organization (WHO) criteria. Meta-regression and subgroup analyses were used to explore the sources of heterogeneity. The study was registered in the PROSPERO database (CRD42021285555). Of the 57,933 citations evaluated, 108 individual studies containing 343,704 subjects were included. The global prevalence of osteoporosis and osteopenia was 19.7% (95%CI, 18.0%–21.4%) and 40.4% (95%CI, 36.9%–43.8%). Prevalence varied greatly according to countries (from 4.1% in Netherlands to 52.0% in Turkey) and continents (from Oceania 8.0% to 26.9% in Africa). The prevalence was higher in developing countries (22.1%, 95%CI, 20.1%–24.1%) than in developed countries (14.5%, 95%CI, 11.5%–17.7%). Our study indicates a considerable prevalence of osteoporosis among the general population based on WHO criteria, and the prevalence varies substantially between countries and regions. Future studies with robust evidence are required to explore risk factors to provide effective preventive strategies for the disease.
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EMUNI, FIS, FZAB, GEOZS, GIS, IJS, IMTLJ, KILJ, KISLJ, MFDPS, NLZOH, NUK, OILJ, PNG, SAZU, SBCE, SBJE, SBMB, SBNM, UKNU, UL, UM, UPUK, VKSCE, ZAGLJ
Here we report on the production and tomography of genuinely entangled Greenberger-Horne-Zeilinger states with up to ten qubits connecting to a bus resonator in a superconducting circuit, where the ...resonator-mediated qubit-qubit interactions are used to controllably entangle multiple qubits and to operate on different pairs of qubits in parallel. The resulting 10-qubit density matrix is probed by quantum state tomography, with a fidelity of 0.668±0.025. Our results demonstrate the largest entanglement created so far in solid-state architectures and pave the way to large-scale quantum computation.
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CMK, CTK, FMFMET, IJS, NUK, PNG, UM
With the advent of new generation information technologies in industry and product design, the big data-driven product design era has arrived. However, the big data-driven product design mainly ...places emphasis on the analysis of physical data rather than the virtual models, in other words, the convergence between product physical and virtual space is usually absent. Digital twin, a new emerging and fast growing technology which connects the physical and virtual world, has attracted much attention worldwide recently. This paper presents a new method for product design based on the digital twin approach. The development of product design is briefly introduced first. The framework of digital twin-driven product design (DTPD) is then proposed and analysed. A case is presented to illustrate the application of the proposed DTPD method.
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BFBNIB, GIS, IJS, IZUM, KILJ, KISLJ, NUK, PILJ, PNG, SAZU, UL, UM, UPUK
Summary Currently, osteoarthritis (OA) is considered a disease of the entire joint, which is not simply a process of wear and tear but rather abnormal remodelling and joint failure of an organ. The ...bone–cartilage interface is therefore a functioning synergistic unit, with a close physical association between subchondral bone and cartilage suggesting the existence of biochemical and molecular crosstalk across the OA interface. The crosstalk at the bone–cartilage interface may be elevated in OA in vivo and in vitro . Increased vascularisation and formation of microcracks associated with abnormal bone remodelling in joints during OA facilitate molecular transport from cartilage to bone and vice versa . Recent reports suggest that several critical signalling pathways and biological factors are key regulators and activate cellular and molecular processes in crosstalk among joint compartments. Therapeutic interventions including angiogenesis inhibitors, agonists/antagonists of molecules and drugs targeting bone remodelling are potential candidates for this interaction. This review summarised the premise for the presence of crosstalk in bone–cartilage interface as well as the current knowledge of the major signalling pathways and molecular interactions that regulate OA progression. A better understanding of crosstalk in bone–cartilage interface may lead to development of more effective strategies for treating OA patients.
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GEOZS, IJS, IMTLJ, KILJ, KISLJ, NLZOH, NUK, OILJ, PNG, SAZU, SBCE, SBJE, UILJ, UL, UM, UPCLJ, UPUK, ZAGLJ, ZRSKP
Two-dimensional (2D) materials such as graphene (Gr), molybdenum disulfide and hexagonal boron nitride (hBN) hold great promise for low-cost and ubiquitous electronics for flexible displays, solar ...cells or smart sensors. To implement this vision, scalable production, transfer and patterning technologies of 2D materials are needed. Recently, roll-to-roll (R2R) processing, a technique that is widely used in industry and known to be cost-effective and scalable, was applied to continuously grow and transfer graphene. However, more work is needed to understand the possibilities and limitations of this technology to make R2R processing of 2D materials feasible. In this work, we fabricated a custom R2R transferring system that allows the accurate control of the process parameters. We employ continuous electrochemical delamination, known as "bubble transfer", to eliminate chemical etchant waste and enable the continuous transfer of 2D materials from metal foils. This also makes our transfer method a renewable and environmentally friendly process. We investigate the surface topology as well as the electrical parameters of roll-to-roll transferred graphene on polyethylene terephthalate (PET) coated with ethylene-vinyl acetate (EVA). Furthermore, we demonstrate for the first time the stacking of two layers of graphene or graphene on hBN by repeated lamination and delamination onto EVA/PET. These results are an important contribution to creating low-cost, large scale and flexible electronics based on 2D materials.
A Nationwide Nitrogen Deposition Monitoring Network (NNDMN) containing 43 monitoring sites was established in China to measure gaseous NH3, NO2, and HNO3 and particulate NH4+ and NO3− in air and/or ...precipitation from 2010 to 2014. Wet/bulk deposition fluxes of Nr species were collected by precipitation gauge method and measured by continuous-flow analyzer; dry deposition fluxes were estimated using airborne concentration measurements and inferential models. Our observations reveal large spatial variations of atmospheric Nr concentrations and dry and wet/bulk Nr deposition. On a national basis, the annual average concentrations (1.3–47.0 μg N m−3) and dry plus wet/bulk deposition fluxes (2.9–83.3 kg N ha−1 yr−1) of inorganic Nr species are ranked by land use as urban > rural > background sites and by regions as north China > southeast China > southwest China > northeast China > northwest China > Tibetan Plateau, reflecting the impact of anthropogenic Nr emission. Average dry and wet/bulk N deposition fluxes were 20.6 ± 11.2 (mean ± standard deviation) and 19.3 ± 9.2 kg N ha−1 yr−1 across China, with reduced N deposition dominating both dry and wet/bulk deposition. Our results suggest atmospheric dry N deposition is equally important to wet/bulk N deposition at the national scale. Therefore, both deposition forms should be included when considering the impacts of N deposition on environment and ecosystem health.
Understanding the deformation behavior of metallic materials containing nanotwins (NTs), which can enhance both strength and ductility, is useful for tailoring microstructures at the micro- and nano- ...scale to enhance mechanical properties. Here, we construct a clear deformation pattern of NTs in austenitic stainless steel by combining in situ tensile tests with a dislocation-based theoretical model and molecular dynamics simulations. Deformation NTs are observed in situ using a transmission electron microscope in different sample regions containing NTs with twin-lamella-spacing (λ) varying from a few nanometers to hundreds of nanometers. Two deformation transitions are found experimentally: from coactivated twinning/detwinning (λ < 5 nm) to secondary twinning (5 nm < λ < 129 nm), and then to the dislocation glide (λ > 129 nm). The simulation results are highly consistent with the observed strong λ-effect, and reveal the intrinsic transition mechanisms induced by partial dislocation slip.
We presented and demonstrated both n-and p-type vertical C-shaped-channel nanosheet field-effect transistors (VCNFETs) featured with precise control of both channel thickness and gate length. The ...VCNFETs were fabricated by high-quality Si/SiGe epitaxy and atomic layer deposition to obtain nanometer-scale process control and self-aligned high-<inline-formula> <tex-math notation="LaTeX">\textit{k}</tex-math> </inline-formula> metal gate (HKMG). The integration flow is compatible with the process used in the mainstream industry and it can be easily extended to vertically stacked devices. Both the gate length and the channel thickness of the VCNFETs are mainly determined by the thicknesses of Si/SiGe films grown by epitaxy, instead of lithography and etch techniques. Perfect subthreshold swing (SS), small drain-induced barrier lowering (DIBL), and large <inline-formula> <tex-math notation="LaTeX">\textit{I}_{\biosc{on}}</tex-math> </inline-formula>/<inline-formula> <tex-math notation="LaTeX">\textit{I}_{\biosc{off}}</tex-math> </inline-formula> ratio were achieved for both n-and p-VCNFETs due to the crystalline silicon channel and the well-defined doping profiles. The device performance and optimization were also investigated and discussed. Used as access transistors in dynamic random access memory (DRAM) array, VCNFETs were also demonstrated for the potential applications to 10-nm DRAM and beyond.
In this paper, SEM and TEM were used to characterize microstructure of Q&P steels with different partitioning time at 300
°C. The interesting phenomena were discovered and discussed:
1.
Lower bainite ...(bainitic ferrite plus ɛ-carbide) rather than carbide-free bainite was observed during partitioning process.
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The mechanical properties of Q&P steels can be tailored and adjusted through balance volume fraction of retained austenite and lower bainite during partitioning process.
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The final amount of austenite was influenced by the transformation kinetics of lower bainite during partitioning process.
According to the analysis, it can be concluded that associated with carbon partitioning from martensite to austenite, lower bainite transformation inevitably occurred. More importantly, lower bainite transformation seriously affected the mechanical properties of Q&P steels and final amount of austenite.
A study of 40SiMnNiCr steel subjected to a two-step quenching and partitioning process (Q&P) is presented. The result suggests that strength variation of Q&P steels during the two-step Q&P process was a cumulative effect of increase of retained austenite fraction, decrease of carbon supersaturation of virgin martensite, and particularly much of lower bainite formation. A trade-off between high strength and good ductility of two-step Q&P steels can be tailored and adjusted by controlling lower bainite fraction. The final amount of austenite was influenced by the transformation kinetics of lower bainite during the partitioning process.
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GEOZS, IMTLJ, KISLJ, NUK, OILJ, PNG, SAZU, SBJE, UL, UM, UPCLJ, UPUK
A novel vertical C-shaped-channel nanosheet field-effect-transistor (VCNFET) featured with precise control of channel-thickness and gate-length, and a unique integration flow of Dual Side Process ...(DSP) are proposed in this work. The VCNFETs were fabricated by high quality Si/SiGe epitaxy, atomic layer etching with nanometer-scale process control and self-aligned high-k metal gate (HKMG). The integration flow is compatible with mainstream CMOS technology. Thanks to the precise control of channel thickness and doping profiles, perfect SS of 61 mV/dec, small DIBL of 8 mV/V, and remarkably large <inline-formula> <tex-math notation="LaTeX">\text{I}_{\text {on}}/\text {I}_{\text {off}} </tex-math></inline-formula> ratio of <inline-formula> <tex-math notation="LaTeX">{6.28}\times {10}^{{9}} </tex-math></inline-formula> were achieved. The device performance and it's optimization were also investigated with the reduction of the external resistance and numerical simulations.
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