Abstract
Recently, three-terminal synaptic devices have attracted considerable attention owing to their nondestructive weight-update behavior, which is attributed to the completely separated ...terminals for reading and writing. However, the structural limitations of these devices, such as a low array density and complex line design, are predicted to result in low processing speeds and high energy consumption of the entire system. Here, we propose a vertical three-terminal synapse featuring a remote weight update via ion gel, which is also extendable to a crossbar array structure. This synaptic device exhibits excellent synaptic characteristics, which are achieved via precise control of ion penetration onto the vertical channel through the weight-control terminal. Especially, the applicability of the developed vertical organic synapse array to neuromorphic computing is demonstrated using a simple crossbar synapse array. The proposed synaptic device technology is expected to be an important steppingstone to the development of high-performance and high-density neural networks.
Recently, MXenes, which are 2D early transition metal carbides and carbonitrides, have attracted wide attention because of their excellent conductivities. Here, the electrode applications of ...Ti2C(OH)xFy, one member of the MXene family, in WSe2 and MoS2 field effect transistors (FETs) are assessed. Kelvin probe force microscopy analysis is performed to determine its work function, which is estimated to be ≈4.98 eV. Devices based on WSe2/Ti2C(OH)xFy and MoS2/Ti2C(OH)xFy heterostructures are fabricated with the mechanical transfer method and their electronic performances evaluated. The temperature‐dependent current–voltage transfer characteristics of the devices are determined to extract their Schottky barrier heights. The hole barrier between WSe2 and Ti2C(OH)xFy is estimated to be ≈0.23 eV and the electron barrier between the MoS2 band and Ti2C(OH)xFy is ≈0.19 eV, which indicates that the pinning effect occurs at the MoS2/Ti2C(OH)xFy interface but not at the WSe2/Ti2C(OH)xFy interface; this difference arises because of the difference between the band structures of WSe2 and MoS2. A complementary metal–oxide–semiconductor inverter based on these electrode properties of Ti2C(OH)xFy with MoS2 (n‐channel) and WSe2 (p‐channel) is fabricated, which demonstrates that Ti2C(OH)xFy is a promising electrode for future nanoelectronics applications.
By using Ti2C(OH)xFy as an electrode for the integration of 2D p‐FET (WSe2) and n‐FET (MoS2), the heights of the hole barriers of WSe2/Ti2C(OH)xFy and MoS2/Ti2C(OH)xFy are determined to be 0.23 eV and 0.19 eV, respectively. A complementary metal–oxide–semiconductor inverter is fabricated, which demonstrates that Ti2C(OH)xFy is a promising electrode for future nanoelectronics applications.
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BFBNIB, FZAB, GIS, IJS, KILJ, NLZOH, NUK, OILJ, SAZU, SBCE, SBMB, UL, UM, UPUK
The unique properties of hybrid heterostructures have motivated the integration of two or more different types of nanomaterials into a single optoelectronic device structure. Despite the promising ...features of organic semiconductors, such as their acceptable optoelectronic properties, availability of low‐cost processes for their fabrication, and flexibility, further optimization of both material properties and device performances remains to be achieved. With the emergence of atomically thin 2D materials, they have been integrated with conventional organic semiconductors to form multidimensional heterostructures that overcome the present limitations and provide further opportunities in the field of optoelectronics. Herein, a comprehensive review of emerging 2D–organic heterostructures—from their synthesis and fabrication to their state‐of‐the‐art optoelectronic applications—is presented. Future challenges and opportunities associated with these heterostructures are highlighted.
The hybridization of 2D materials and organic materials represents a promising domain for the realization of improved or unprecedented features in comparison to those of semiconductor devices. This comprehensive review focuses on emerging 2D–organic heterostructures (from their synthesis and fabrication to their state‐of‐the‐art optoelectronic applications) and highlights the future challenges and opportunities associated with these heterostructures.
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BFBNIB, FZAB, GIS, IJS, KILJ, NLZOH, NUK, OILJ, SAZU, SBCE, SBMB, UL, UM, UPUK
A novel hybrid phototransistor consisting of molybdenum carbide (Mo2C) and molybdenum disulfide (MoS2) is proposed. By exploiting the interface properties of MoS2 and Mo2C, a highly sensitive and ...broad‐spectral response photodetector is fabricated. The underlying mechanism of the enhanced performance is the efficient hot carrier injection from Mo2C to MoS2. The strong coupling of MoS2 and Mo2C at the interface provides the significantly low Schottky barrier height (≈70 meV), which gives rise to the significantly efficient hot carrier transfer from Mo2C to MoS2. The grating of metallic Mo2C produces plasmonic resonance, which provides hot carriers to the MoS2 channel. By adjusting the grating period of Mo2C (400–1000 nm), the optimal photoresponse of light can be controlled, from visible to NIR. By integrating various Mo2C multigrating periods (400–1000 nm) with MoS2, a novel photodetector is demonstrated with high responsivity (R > 103 A W−1) and light‐to‐dark current ratio (>102) over a broad spectral range (405–1310 nm). The proposed novel hybrid photodetector, 2D semiconductors with multigrating 2D metallic stripes, exhibits high sensitivity and broad spectral detection of light and can overcome the inherent weakness of conventional 2D photodetectors, paving the way forward for next‐generation photoelectric devices.
A hybrid photodetector consisting of a 2D semiconductor (MoS2) integrated with multiple grating metallic stripes (Mo2C) demonstrates high sensitivity and broad spectral detection of light, overcoming the inherent weakness of conventional 2D photodetectors and opening up possibilities for next‐generation photoelectric device technology by providing new functionalities for high sensitivity and effective broad‐spectrum photodetection.
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BFBNIB, FZAB, GIS, IJS, KILJ, NLZOH, NUK, OILJ, SAZU, SBCE, SBMB, UL, UM, UPUK
Conventional stretchable electronics that adopt a wavy design, a neutral mechanical plane, and conformal contact between abiotic and biotic interfaces have exhibited diverse skin‐interfaced ...applications. Despite such remarkable progress, the evolution of intelligent skin prosthetics is challenged by the absence of the monolithic integration of neuromorphic constituents into individual sensing and actuating components. Herein, a bioinspired stretchable sensory‐neuromorphic system, comprising an artificial mechanoreceptor, artificial synapse, and epidermal photonic actuator is demonstrated; these three biomimetic functionalities correspond to a stretchable capacitive pressure sensor, a resistive random‐access memory, and a quantum dot light‐emitting diode, respectively. This system features a rigid‐island structure interconnected with a sinter‐free printable conductor, which is optimized by controlling the evaporation rate of solvent (≈160% stretchability and ≈18 550 S cm−1 conductivity). Devised design improves both areal density and structural reliability while avoiding the thermal degradation of heat‐sensitive stretchable electronic components. Moreover, even in the skin deformation range, the system accurately recognizes various patterned stimuli via an artificial neural network with training/inferencing functions. Therefore, the new bioinspired system is expected to be an important step toward implementing intelligent wearable electronics.
A novel form of stretchable integrated system, namely a bioinspired stretchable sensory‐neuromorphic system, is presented, which comprises an artificial mechanoreceptor, an artificial synapse, and an epidermal photonic actuator as three devices. This system features a bioinspired sensory‐neuromorphic system entailing tactile sensing, pattern learning/inferencing, and visualizing feedback information.
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BFBNIB, FZAB, GIS, IJS, KILJ, NLZOH, NUK, OILJ, SAZU, SBCE, SBMB, UL, UM, UPUK
The priority of synaptic device researches has been given to prove the device potential for the emulation of synaptic dynamics and not to functionalize further synaptic devices for more complex ...learning. Here, we demonstrate an optic-neural synaptic device by implementing synaptic and optical-sensing functions together on h-BN/WSe
heterostructure. This device mimics the colored and color-mixed pattern recognition capabilities of the human vision system when arranged in an optic-neural network. Our synaptic device demonstrates a close to linear weight update trajectory while providing a large number of stable conduction states with less than 1% variation per state. The device operates with low voltage spikes of 0.3 V and consumes only 66 fJ per spike. This consequently facilitates the demonstration of accurate and energy efficient colored and color-mixed pattern recognition. The work will be an important step toward neural networks that comprise neural sensing and training functions for more complex pattern recognition.
The outstanding performance (sheet resistance of 5 Ω sq–1 at transmittance of 90%) and strongly adhesive (30.7 J m–2) silver nanowires (AgNWs) are fabricated using flash‐induced plasmonic welding ...(FPW) based on theoretical research of photothermal interactions. The FPW‐processed AgNWs are utilized as electrodes of a transparent flexible energy harvester, and this device exhibits excellent transmittance and high electric output performance. The FPW methodology provides a high‐tech solution for transparent flexible electronics.
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BFBNIB, FZAB, GIS, IJS, KILJ, NLZOH, NUK, OILJ, SAZU, SBCE, SBMB, UL, UM, UPUK
An ultrahigh performance MoS2 photodetector with high photoresponsivity (1.94 × 106 A W–1) and detectivity (1.29 × 1012 Jones) under 520 nm and 4.63 pW laser exposure is demonstrated. This ...photodetector is based on a methyl‐ammonium lead halide perovskite/MoS2 hybrid structure with (3‐aminopropyl)triethoxysilane doping. The performance degradation caused by moisture is also minimized down to 20% by adopting a new encapsulation bilayer of octadecyltrichlorosilane/polymethyl methacrylate.
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BFBNIB, FZAB, GIS, IJS, KILJ, NLZOH, NUK, OILJ, SAZU, SBCE, SBMB, UL, UM, UPUK
Nuclear factor-κB (NF-κB) is a transcription factor that plays a crucial role in various biological processes, including immune response, inflammation, cell growth and survival, and development. ...NF-κB is critical for human health, and aberrant NF-κB activation contributes to development of various autoimmune, inflammatory and malignant disorders including rheumatoid arthritis, atherosclerosis, inflammatory bowel diseases, multiple sclerosis and malignant tumors. Thus, inhibiting NF-κB signaling has potential therapeutic applications in cancer and inflammatory diseases.
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IZUM, KILJ, NUK, PILJ, PNG, SAZU, UL, UM, UPUK
Bulk and two-dimensional black phosphorus are considered to be promising battery materials due to their high theoretical capacities of 2,600 mAh g
. However, their rate and cycling capabilities are ...limited by the intrinsic (de-)alloying mechanism. Here, we demonstrate a unique surface redox molecular-level mechanism of P sites on oxidized black phosphorus nanosheets that are strongly coupled with graphene via strong interlayer bonding. These redox-active sites of the oxidized black phosphorus are confined at the amorphorized heterointerface, revealing truly reversible pseudocapacitance (99% of total stored charge at 2,000 mV s
). Moreover, oxidized black-phosphorus-based electrodes exhibit a capacitance of 478 F g
(four times greater than black phosphorus) with a rate capability of ~72% (compared to 21.2% for black phosphorus) and retention of ~91% over 50,000 cycles. In situ spectroelectrochemical and theoretical analyses reveal a reversible change in the surface electronic structure and chemical environment of the surface-exposed P redox sites.
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EMUNI, FIS, FZAB, GEOZS, GIS, IJS, IMTLJ, KILJ, KISLJ, MFDPS, NLZOH, NUK, OILJ, PNG, SAZU, SBCE, SBJE, SBMB, SBNM, UKNU, UL, UM, UPUK, VKSCE, ZAGLJ
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