The stabilization of transition metals as isolated centres with high areal density on suitably tailored carriers is crucial for maximizing the industrial potential of single-atom heterogeneous ...catalysts. However, achieving single-atom dispersions at metal contents above 2 wt% remains challenging. Here we introduce a versatile approach combining impregnation and two-step annealing to synthesize ultra-high-density single-atom catalysts with metal contents up to 23 wt% for 15 metals on chemically distinct carriers. Translation to a standardized, automated protocol demonstrates the robustness of our method and provides a path to explore virtually unlimited libraries of mono- or multimetallic catalysts. At the molecular level, characterization of the synthesis mechanism through experiments and simulations shows that controlling the bonding of metal precursors with the carrier via stepwise ligand removal prevents their thermally induced aggregation into nanoparticles. The drastically enhanced reactivity with increasing metal content exemplifies the need to optimize the surface metal density for a given application. Moreover, the loading-dependent site-specific activity observed in three distinct catalytic systems reflects the well-known complexity in heterogeneous catalyst design, which now can be tackled with a library of single-atom catalysts with widely tunable metal loadings.
Full text
Available for:
EMUNI, FIS, FZAB, GEOZS, GIS, IJS, IMTLJ, KILJ, KISLJ, MFDPS, NLZOH, NUK, OILJ, PNG, SAZU, SBCE, SBJE, SBMB, SBNM, UKNU, UL, UM, UPUK, VKSCE, ZAGLJ
Atomic defects, being the most prevalent zero-dimensional topological defects, are ubiquitous in a wide range of 2D transition-metal dichalcogenides (TMDs). They could be intrinsic, formed during the ...initial sample growth, or created by postprocessing. Despite the majority of TMDs being largely unaffected after losing chalcogen atoms in the outermost layer, a spectrum of properties, including optical, electrical, and chemical properties, can be significantly modulated, and potentially invoke applicable functionalities utilized in many applications. Hence, controlling chalcogen atomic defects provides an alternative avenue for engineering a wide range of physical and chemical properties of 2D TMDs. In this article, we review recent progress on the role of chalcogen atomic defects in engineering 2D TMDs, with a particular focus on device performance improvements. Various approaches for creating chalcogen atomic defects including nonstoichiometric synthesis and postgrowth treatment, together with their characterization and interpretation are systematically overviewed. The tailoring of optical, electrical, and magnetic properties, along with the device performance enhancement in electronic, optoelectronic, chemical sensing, biomedical, and catalytic activity are discussed in detail. Postformation dynamic evolution and repair of chalcogen atomic defects are also introduced. Finally, we offer our perspective on the challenges and opportunities in this field.
Full text
Available for:
IJS, KILJ, NUK, PNG, UL, UM
Abstract
Exposing and stabilizing undercoordinated platinum (Pt) sites and therefore optimizing their adsorption to reactive intermediates offers a desirable strategy to develop highly efficient ...Pt-based electrocatalysts. However, preparation of atomically controllable Pt-based model catalysts to understand the correlation between electronic structure, adsorption energy, and catalytic properties of atomic Pt sites is still challenging. Herein we report the atomically thin two-dimensional PtTe
2
nanosheets with well-dispersed single atomic Te vacancies (Te-SAVs) and atomically well-defined undercoordinated Pt sites as a model electrocatalyst. A controlled thermal treatment drives the migration of the Te-SAVs to form thermodynamically stabilized, ordered Te-SAV clusters, which decreases both the density of states of undercoordinated Pt sites around the Fermi level and the interacting orbital volume of Pt sites. As a result, the binding strength of atomically defined Pt active sites to H intermediates is effectively reduced, which renders PtTe
2
nanosheets highly active and stable in hydrogen evolution reaction.
Abstract
The ability to precisely engineer the doping of sub-nanometer bimetallic clusters offers exciting opportunities for tailoring their catalytic performance with atomic accuracy. However, the ...fabrication of singly dispersed bimetallic cluster catalysts with atomic-level control of dopants has been a long-standing challenge. Herein, we report a strategy for the controllable synthesis of a precisely doped single cluster catalyst consisting of partially ligand-enveloped Au
4
Pt
2
clusters supported on defective graphene. This creates a bimetal single cluster catalyst (Au
4
Pt
2
/G) with exceptional activity for electrochemical nitrogen (N
2
) reduction. Our mechanistic study reveals that each N
2
molecule is activated in the confined region between cluster and graphene. The heteroatom dopant plays an indispensable role in the activation of N
2
via an enhanced back donation of electrons to the N
2
LUMO. Moreover, besides the heteroatom Pt, the catalytic performance of single cluster catalyst can be further tuned by using Pd in place of Pt as the dopant.
As a new member of the MXene group, 2D Mo2C has attracted considerable interest due to its potential application as electrodes for energy storage and catalysis. The large‐area synthesis of Mo2C film ...is needed for such applications. Here, the one‐step direct synthesis of 2D Mo2C‐on‐graphene film by molten copper‐catalyzed chemical vapor deposition (CVD) is reported. High‐quality and uniform Mo2C film in the centimeter range can be grown on graphene using a Mo–Cu alloy catalyst. Within the vertical heterostructure, graphene acts as a diffusion barrier to the phase‐segregated Mo and allows nanometer‐thin Mo2C to be grown. Graphene‐templated growth of Mo2C produces well‐faceted, large‐sized single crystals with low defect density, as confirmed by scanning transmission electron microscopy (STEM) measurements. Due to its more efficient graphene‐mediated charge‐transfer kinetics, the as‐grown Mo2C‐on‐graphene heterostructure shows a much lower onset voltage for hydrogen evolution reactions as compared to Mo2C‐only electrodes.
The one‐step direct synthesis of a 2D Mo2C‐on‐graphene heterostructure by molten Cu‐catalyzed chemical vapor deposition is reported. Graphene acts as a diffusion barrier to phase‐segregated Mo, thus allowing the thickness of Mo2C to be kinetically controlled. The heterostructure functions as a highly stable electrode in hydrogen evolution reactions.
Full text
Available for:
BFBNIB, FZAB, GIS, IJS, KILJ, NLZOH, NUK, OILJ, SAZU, SBCE, SBMB, UL, UM, UPUK
Achieving homogeneous phase transition and uniform charge distribution is essential for good cycle stability and high capacity when phase conversion materials are used as electrodes. Herein, we show ...that chemical lithiation of bulk 2H-MoS2 distorts its crystalline domains in three primary directions to produce mosaic-like 1T′ nanocrystalline domains, which improve phase and charge uniformity during subsequent electrochemical phase conversion. 1T′-Li x MoS2, a macroscopic dense material with interconnected nanoscale grains, shows excellent cycle stability and rate capability in a lithium rechargeable battery compared to bulk or exfoliated-restacked MoS2. Transmission electron microscopy studies reveal that the interconnected MoS2 nanocrystals created during the phase change process are reformable even after multiple cycles of galvanostatic charging/discharging, which allows them to play important roles in the long term cycling performance of the chemically intercalated TMD materials. These studies shed light on how bulk TMDs can be processed into quasi-2D nanophase material for stable energy storage.
Full text
Available for:
IJS, KILJ, NUK, PNG, UL, UM
Two-dimensional (2D) magnets with intrinsic ferromagnetic/antiferromagnetic (FM/AFM) ordering are highly desirable for future spintronic devices. However, the direct growth of their crystals is in ...its infancy. Here we report a chemical vapor deposition approach to controllably grow layered tetragonal and non-layered hexagonal FeTe nanoplates with their thicknesses down to 3.6 and 2.8 nm, respectively. Moreover, transport measurements reveal these obtained FeTe nanoflakes show a thickness-dependent magnetic transition. Antiferromagnetic tetragonal FeTe with the Néel temperature (T
) gradually decreases from 70 to 45 K as the thickness declines from 32 to 5 nm. And ferromagnetic hexagonal FeTe is accompanied by a drop of the Curie temperature (T
) from 220 K (30 nm) to 170 K (4 nm). Theoretical calculations indicate that the ferromagnetic order in hexagonal FeTe is originated from its concomitant lattice distortion and Stoner instability. This study highlights its potential applications in future spintronic devices.
Although polymers have been studied for well over a century, there are few examples of covalently linked polymer crystals synthesised directly from solution. One-dimensional (1D) covalent polymers ...that are packed into a framework structure can be viewed as a 1D covalent organic framework (COF), but making a single crystal of this has been elusive. Herein, by combining labile metal coordination and dynamic covalent chemistry, we discover a strategy to synthesise single-crystal metallo-COFs under solvothermal conditions. The single-crystal structure is rigorously solved using single-crystal electron diffraction technique. The non-centrosymmetric metallo-COF allows second harmonic generation. Due to the presence of syntactic pendant amine groups along the polymer chains, the metallopolymer crystal can be further cross-linked into a crystalline woven network.
Abstract
Thermoelectrics enable waste heat recovery, holding promises in relieving energy and environmental crisis. Lillianite materials have been long-term ignored due to low thermoelectric ...efficiency. Herein we report the discovery of superior thermoelectric performance in Pb
7
Bi
4
Se
13
based lillianites, with a peak figure of merit,
zT
of 1.35 at 800 K and a high average
zT
of 0.92 (450–800 K). A unique quality factor is established to predict and evaluate thermoelectric performances. It considers both band nonparabolicity and band gaps, commonly negligible in conventional quality factors. Such appealing performance is attributed to the convergence of effectively nested conduction bands, providing a high number of valley degeneracy, and a low thermal conductivity, stemming from large lattice anharmonicity, low-frequency localized Einstein modes and the coexistence of high-density moiré fringes and nanoscale defects. This work rekindles the vision that Pb
7
Bi
4
Se
13
based lillianites are promising candidates for highly efficient thermoelectric energy conversion.
Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) have emerged as attractive platforms in next-generation nanoelectronics and optoelectronics for reducing device sizes down ...to a 10 nm scale. To achieve this, the controlled synthesis of wafer-scale single-crystal TMDs with high crystallinity has been a continuous pursuit. However, previous efforts to epitaxially grow TMD films on insulating substrates (e.g., mica and sapphire) failed to eliminate the evolution of antiparallel domains and twin boundaries, leading to the formation of polycrystalline films. Herein, we report the epitaxial growth of wafer-scale single-crystal MoS2 monolayers on vicinal Au(111) thin films, as obtained by melting and resolidifying commercial Au foils. The unidirectional alignment and seamless stitching of the MoS2 domains were comprehensively demonstrated using atomic- to centimeter-scale characterization techniques. By utilizing onsite scanning tunneling microscope characterizations combined with first-principles calculations, it was revealed that the nucleation of MoS2 monolayer is dominantly guided by the steps on Au(111), which leads to highly oriented growth of MoS2 along the ⟨110⟩ step edges. This work, thereby, makes a significant step toward the practical applications of MoS2 monolayers and the large-scale integration of 2D electronics.
Full text
Available for:
IJS, KILJ, NUK, PNG, UL, UM