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hits: 268
11.
  • Characteristics of heteroep... Characteristics of heteroepitaxial structures AlxGa1–xN for p–i–n diode focal plane arrays
    Smirnov, D. V.; Boltar, K. O.; Sednev, M. V. ... Journal of communications technology & electronics, 2016/3, Volume: 61, Issue: 3
    Journal Article
    Peer reviewed

    Mesaelements of the focal plane array (FPA) of p – i – n diodes based on Al x Ga 1– x N for p–i–n heteroepitaxial structures (HESs) grown by the molecular-beam epitaxy and hydride epitaxy methods ...
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12.
  • Admittance of MIS Structure... Admittance of MIS Structures Based on MBE Hg1 – xCdxTe (x = 0.21–0.23) in a Wide Temperature Range
    Voitsekhovskii, A. V.; Kulchitsky, N. A.; Nesmelov, S. N. ... Journal of communications technology & electronics, 09/2018, Volume: 63, Issue: 9
    Journal Article
    Peer reviewed

    Features of the electrical properties of n ( p )-Hg 1– x Cd x Te ( x = 0.21–0.23) with Al 2 O 3 or SiO 2 /Si 3 N 4 dielectrics are considered. The HgCdTe films were grown by means of molecular beam ...
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13.
  • Znanstveno-tehnički dosezi ... Znanstveno-tehnički dosezi Boškovićeva metafizičkog prirodoslovlja
    Letica, Marito Mihovil Filozofska istraživanja, 10/2019, Volume: 39, Issue: 3/155
    Journal Article
    Peer reviewed
    Open access

    In this paper it is highlighted and argued that Boscovich’s natural sciences theory is so deeply rooted in metaphysics and pervaded by it, we can maintain that it is a distinctive example of ...
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14.
  • To the Problem of Optimizat... To the Problem of Optimization of Parameters of a Double Heterostructure Based on Direct-Gap Semiconductors for Avalanche Photodiodes
    Kholodnov, V. A.; Burlakov, I. D. Journal of communications technology & electronics, 09/2018, Volume: 63, Issue: 9
    Journal Article
    Peer reviewed

    A double heterostructure based on direct-gap semiconductors with a photoabsorption middle layer at the avalanche breakdown voltage is considered. Such structures are used in the development of ...
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15.
  • Prirodnofilozofska gledišta... Prirodnofilozofska gledišta Josipa Franje Domina u tezariju De corpore universim (1785., 1786.) ; Josip Franjo Domin
    Martinović, Ivica Filozofska istraživanja, 10/2019, Volume: 39, Issue: 3
    Journal Article, Paper
    Peer reviewed
    Open access

    Posljednji đerski i prvi pečuški tezarij Josipa Franje Domina, sastavljeni od 25 teza »iz eksperimentalne fizike«, a naslovljeni De corpore generatim, bili su prvi tezariji što ih je Zagrepčanin ...
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16.
  • Coincidence study of double... Coincidence study of double electron emission associated with K-shell photoionization of C60 / Исследование двойной электронной эмиссии, связанной с Фотоионизацией к-оболочки С60 / Koincidentna studija dvostruke elektronske emisije povezane sa fotojonizacijom K-ljuske C60
    Sanja Lj. Korica; Axel Reinköster; Uwe Becker Vojnotehnički glasnik, 10/2018, Volume: 66, Issue: 4
    Journal Article
    Peer reviewed
    Open access

    The (multiple) photoionization and subsequent fragmentation of the C60 molecule was studied with the synchrotron radiation after removing electrons from the inner K-shell. Our intention was ...
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17.
  • A 1280 × 1024 CMOS visible-... A 1280 × 1024 CMOS visible-range photodetector chip with a pixel size of 13 × 13 μm
    Borodin, D. V.; Osipov, Yu. V.; Vasil’ev, V. V. Journal of communications technology & electronics, 03/2017, Volume: 62, Issue: 3
    Journal Article
    Peer reviewed

    A photodetector array chip for detection of the optical signal in a wave range of 0.4–1.0 μm; conversion of the optical signal into the electric signal; and its extraction in the analog form to 1, 2, ...
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18.
  • Long-Term Stability of a 64... Long-Term Stability of a 640 × 512 InSb Focal Plane Array with a Pitch of 15 μm
    Vlasov, P. V. Journal of communications technology & electronics, 03/2018, Volume: 63, Issue: 3
    Journal Article
    Peer reviewed

    The long-term stability of a 640x512 InSb focal plane array (FPA) with a pitch of 15 μm combined with a Stirling cooler and an interface block has been investigated.The dependences of the FPA ...
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19.
  • Methods for Calculation and... Methods for Calculation and Control of the Impurity Difference Dose in Avalanche InGaAs/InP Structures
    Budtolaev, A. K.; Kravchenko, N. V.; Khakuashev, P. E. ... Journal of communications technology & electronics, 03/2018, Volume: 63, Issue: 3
    Journal Article
    Peer reviewed

    Methods for calculation and control of impurity difference dose Q а during the planar procedure of fabrication of avalanche photodiodes (APDs) based on heteroepitaxial InGaAs/InP structures are ...
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20.
  • Influence of Indirect Trans... Influence of Indirect Transitions on Optical Characteristics of A3B5 Heteroepitaxial Layers
    Nikonov, A. V.; Iakovleva, N. I. Journal of communications technology & electronics, 03/2018, Volume: 63, Issue: 3
    Journal Article
    Peer reviewed

    The influence of indirect transitions of Г-L and Г-Х types in the Brillouin zone on optical and electrophysical characteristics of heteroepitaxial layers of А 3 В 5 compounds is estimated by the ...
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