Brain-inspired computing is an emerging field, which aims to extend the capabilities of information technology beyond digital logic. A compact nanoscale device, emulating biological synapses, is ...needed as the building block for brain-like computational systems. Here, we report a new nanoscale electronic synapse based on technologically mature phase change materials employed in optical data storage and nonvolatile memory applications. We utilize continuous resistance transitions in phase change materials to mimic the analog nature of biological synapses, enabling the implementation of a synaptic learning rule. We demonstrate different forms of spike-timing-dependent plasticity using the same nanoscale synapse with picojoule level energy consumption.
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IJS, KILJ, NUK, PNG, UL, UM
Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have been considered as promising candidates for next generation nanoelectronics. Because of their atomically-thin structure and high ...surface to volume ratio, the interfaces involved in TMDC-based devices play a predominant role in determining the device performance, such as charge injection/collection at the metal/TMDC interface, and charge carrier trapping at the dielectric/TMDC interface. On the other hand, the crystalline structures of TMDCs are enriched by a variety of intrinsic defects, including vacancies, adatoms, grain boundaries, and substitutional impurities. Customized design and engineering of the interfaces and defects provides an effective way to modulate the properties of TMDCs and finally enhance the device performance. Herein, we summarize and highlight recent advances and state-of-the-art investigations on the interface and defect engineering of TMDCs and their corresponding applications in electronic and optoelectronic devices. Various interface engineering approaches for TMDCs are overviewed, including surface charge transfer doping, TMDC/metal contact engineering, and TMDC/dielectric interface engineering. Subsequently, different types of structural defects in TMDCs are introduced. Defect engineering strategies utilized to modulate the optical and electronic properties of TMDCs, as well as the developed high-performance and functional devices are summarized. Finally, we highlight the challenges and opportunities for interface and defect engineering in TMDC materials for electronics and optoelectronics.
This review summarizes the recent advances in understanding the effects of interface and defect engineering on the electronic and optical properties of TMDCs, as well as their applications in advanced (opto)electronic devices.
The 15th International Conference “Micro- and Nanoelectronics—2023” (ICMNE-2023) including the extended Session “Quantum Informatics” has been held on October 2-6, 2023 at Zvenigorod, Moscow Region, ...Russia in a hybrid online/offline format. Having started, at the suggestion of Academician Valiev, in 1994 as the All-Russian Conference “Microelectronics” with the participation of foreign scientists, it gained popularity among specialists in this field, and by 1999 it was transformed into an International Conference, held in English, “International Conference on Micro- and Nanoelectronics” (ICMNE) which is a biannual event covering the main fields of micro- and nanoelectronic technologies and device physics.
Web-resource of ICMNE—2023:
https://icmne.ftian.ru/
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EMUNI, FIS, FZAB, GEOZS, GIS, IJS, IMTLJ, KILJ, KISLJ, MFDPS, NLZOH, NUK, OILJ, PNG, SAZU, SBCE, SBJE, SBMB, UKNU, UL, UM, UPUK, VKSCE, ZAGLJ
Objectives
. Nanoelectronics is concerned with the development of physical and technological foundations for the creation of integrated circuits comprised of elements whose topological dimensions do ...not exceed 100 nm. Nanotechnology includes the creation and use of materials, devices and technical systems whose functioning is determined by their nanostructure, i.e., comprising ordered fragments ranging from 1 to 100 nm in size. The present research is aimed at developing a concept for training highly qualified specialists in the field of nanoelectronics and nanotechnologies on the example of the Department of Nanoelectronics of the Institute of Advanced Technologies and Industrial Programming at the MIREA - Russian Technological University.
Methods
. Promising approaches for supporting the educational process within the nanoindustry are analyzed and compared.
Results
. Three fundamental components of education in the field of nanoindustry can be distinguished: physical (the study and search for new promising physical effects); materials science, related to the study, search, and synthesis of new advanced materials; informatics (including mastering of modern software packages and programming languages for modeling a wide range of nanoindustry elements and materials).
Conclusions
. All three fundamental components of education within nanoindustry have been effectively implemented by combining scientific laboratories and centers at the Department of Nanoelectronics. After graduating from the Department of Nanoelectronics, graduates can work for leading scientific institutes and technical organizations in Russia, intern at specialized organizations in neighboring and other countries, teach at leading universities, and start their own knowledge-intensive business.
It is very challenging to employ solution‐processed conducting films in large‐area ultrathin nanoelectronics. Here, spray‐coated Ti3C2Tx MXene films as metal contacts are successfully integrated into ...sub‐10 nm gate oxide 2D MoS2 transistor circuits. Ti3C2Tx films are spray coated on glass substrates followed by vacuum annealing. Compared to the as‐prepared sample, vacuum annealed films exhibit a higher conductivity (≈11 000 S cm−1) and a lower work function (≈4.5 eV). Besides, the annealed Ti3C2Tx film can be patterned through a standard cleanroom process without peeling off. The annealed Ti3C2Tx film shows a better band alignment for n‐type transport in MoS2 channel with small work function mismatch of 0.06 eV. The MoS2 film can be uniformly transferred on the patterned Ti3C2Tx surface and then readily processed through the cleanroom process. A large‐area array of Ti3C2Tx MXene–MoS2 transistors is fabricated using different dielectric thicknesses and semiconducting channel sizes. High yield and stable performance for these transistor arrays even with an 8 nm‐thick dielectric layer are demonstrated. Besides, several circuits are demonstrated, including rectifiers, negative‐channel metal–oxide–semiconductor (NMOS) inverters, and voltage‐shift NMOS inverters. Overall, this work indicates the tremendous potential for solution‐processed Ti3C2Tx MXene films in large‐area 2D nanoelectronics.
Large‐area transistor circuits are successfully fabricated using solution‐processed Ti3C2Tx MXene as source/drain and gate contact electrodes, wafer‐scale MoS2 film as the channel, and an ultrathin HfO2/Al2O3 layer of about 8 nm as the dielectric layer. The high yield and performance uniformity of the device array indicate great potential for Ti3C2Tx MXene in large‐area ultrathin 2D electronics.
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BFBNIB, FZAB, GIS, IJS, KILJ, NLZOH, NUK, OILJ, SBCE, SBMB, UL, UM, UPUK
Implanted brain electrodes construct the only means to electrically interface with individual neurons in vivo, but their recording efficacy and biocompatibility pose limitations on scientific and ...clinical applications. We showed that nanoelectronic thread (NET) electrodes with subcellular dimensions, ultraflexibility, and cellular surgical footprints form reliable, glial scar-free neural integration. We demonstrated that NET electrodes reliably detected and tracked individual units for months; their impedance, noise level, single-unit recording yield, and the signal amplitude remained stable during long-term implantation. In vivo two-photon imaging and postmortem histological analysis revealed seamless, subcellular integration of NET probes with the local cellular and vasculature networks, featuring fully recovered capillaries with an intact blood-brain barrier and complete absence of chronic neuronal degradation and glial scar.
2D van der Waals ferroelectrics have emerged as an attractive building block with immense potential to provide multifunctionality in nanoelectronics. Although several accomplishments have been ...reported in ferroelectric switching for out-of-plane ferroelectrics down to the monolayer, a purely in-plane ferroelectric has not been experimentally validated at the monolayer thickness. Herein, an in-plane ferroelectricity is demonstrated for micrometer-size monolayer SnS at room temperature. SnS has been commonly regarded to exhibit the odd-even effect, where the centrosymmetry breaks only in the odd-number layers to exhibit ferroelectricity. Remarkably, however, a robust room temperature ferroelectricity exists in SnS below a critical thickness of 15 layers with both an odd and even number of layers, suggesting the possibility of controlling the stacking sequence of multilayer SnS beyond the limit of ferroelectricity in the monolayer. This work will pave the way for nanoscale ferroelectric applications based on SnS as a platform for in-plane ferroelectrics.
Since its inception more than 25 years ago, Piezoresponse Force Microscopy (PFM) has become one of the mainstream techniques in the field of nanoferroic materials. This review describes the evolution ...of PFM from an imaging technique to a set of advanced methods, which have played a critical role in launching new areas of ferroic research, such as multiferroic devices and domain wall nanoelectronics. The paper reviews the impact of advanced PFM modes concerning the discovery and scientific understanding of novel nanoferroic phenomena and discusses challenges associated with the correct interpretation of PFM data. In conclusion, it offers an outlook for future trends and developments in PFM.
To access superconductivity via the electric field effect in a clean, two-dimensional device is a central goal of nanoelectronics. Recently, superconductivity has been realized in graphene moiré ...heterostructures
; however, many of these structures are not mechanically stable, and experiments show signatures of strong disorder. Here we report the observation of superconductivity-manifesting as low or vanishing resistivity at sub-kelvin temperatures-in crystalline rhombohedral trilayer graphene
, a structurally metastable carbon allotrope. Superconductivity occurs in two distinct gate-tuned regions (SC1 and SC2), and is deep in the clean limit defined by the ratio of mean free path and superconducting coherence length. Mapping of the normal state Fermi surfaces by quantum oscillations reveals that both superconductors emerge from an annular Fermi sea, and are proximal to an isospin-symmetry-breaking transition where the Fermi surface degeneracy changes
. SC1 emerges from a paramagnetic normal state, whereas SC2 emerges from a spin-polarized, valley-unpolarized half-metal
and violates the Pauli limit for in-plane magnetic fields by at least one order of magnitude
. We discuss our results in view of several mechanisms, including conventional phonon-mediated pairing
, pairing due to fluctuations of the proximal isospin order
, and intrinsic instabilities of the annular Fermi liquid
. Our observation of superconductivity in a clean and structurally simple two-dimensional metal provides a model system to test competing theoretical models of superconductivity without the complication of modelling disorder, while enabling new classes of field-effect controlled electronic devices based on correlated electron phenomena and ballistic electron transport.
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GEOZS, IJS, IMTLJ, KISLJ, NLZOH, NUK, OILJ, PNG, SAZU, SBCE, SBMB, UL, UM, UPUK, ZAGLJ
Rapid digital technology advancement has resulted in a tremendous increase in computing tasks imposing stringent energy efficiency and area efficiency requirements on next-generation computing. To ...meet the growing data-driven demand, in-memory computing and transistor-based computing have emerged as potent technologies for the implementation of matrix and logic computing. However, to fulfil the future computing requirements new materials are urgently needed to complement the existing Si complementary metal-oxide-semiconductor technology and new technologies must be developed to enable further diversification of electronics and their applications. The abundance and rich variety of electronic properties of two-dimensional materials have endowed them with the potential to enhance computing energy efficiency while enabling continued device downscaling to a feature size below 5 nm. In this Review, from the perspective of matrix and logic computing, we discuss the opportunities, progress and challenges of integrating two-dimensional materials with in-memory computing and transistor-based computing technologies.
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FZAB, GEOZS, IJS, IMTLJ, KILJ, KISLJ, MFDPS, NLZOH, NUK, OILJ, PNG, SAZU, SBCE, SBJE, SBMB, SBNM, UKNU, UL, UM, UPUK, VKSCE, ZAGLJ
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