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On the origin of interface induced charge density ionized cluster beam deposited metal-semiconductor systemsKorošak, Dean ; Cvikl, BrunoThe disorderd interface electronic structure of ICB deposited Schottky structure is calculated using simple models for metal and semiconductor. It is shown that the origin of the from capaticance ... measurements detected bias dependent charge density can be ascribed to the presence of the disorder induced continuum of the electron states in the semicondutor energy gap and its coupling with the incorporated metal impurity states at the interface between the disordered interlayer and the regular semiconductor.Source: ASDAM 2000 (Str. 131-134)Type of material - conference contributionPublish date - 2000Language - englishCOBISS.SI-ID - 5784854
Author
Korošak, Dean |
Cvikl, Bruno
Topics
fizika |
polprevodniki |
tanki sloji |
nanos |
curki ioniziranih skupkov |
vakuumska tehnika |
physics |
semiconductors |
thin layers |
deposit |
ionized cluster beams |
vacuum techniques |
ICB
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Database name | Field | Year |
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Korošak, Dean | 15413 |
Cvikl, Bruno | 01048 |
Source: Personal bibliographies
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