The interface electronic structure in ionized cluster beam deposited Ag/Si Schottky junctions
Korošak, Dean ; Cvikl, Bruno
The distorted interface electronic structure of ICB deposited Schottky structure is calculated using simple models for the metal semiconductor. The interface structure is calculated using simple ...models for the metal and the semicondictor. The interface structure is obtained using simple models for metal and semiconductor in tight binding approximation. It is argued that the nonzero density of states induced by the presence of the disorder in the semiconductor lattice causes the variation of the Schottky barrier height withthe acceleration voltage observed in ICB experiments. The observed variation is explained in terms of the disorder induced gap states theory.
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