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  • Large-Area SiC-UV Photodiod...
    Sciuto, A.; Giudice, G.; D'Arrigo, G.; Meli, A.; Calcagno, L.; Di Franco, S.; Mazzillo, M.; Franzo, G.; Albergo, S.; Tricomi, A.; Longo, D.

    IEEE sensors journal, 04/2019, Volume: 19, Issue: 8
    Journal Article

    In this paper, we present the extensive characterization of large-area silicon carbide-based UV sensors candidate for outdoors spectroscopic applications of gas or liquid. The proposed SiC Schottky devices exhibit a dark current density of 0.12 nA/cm 2 at 15 V, a 0.12-A/W responsivity at 300 nm, optimal visible blindness, and a switching time of ~190 ns. Effects of temperature on the sensor performance, of crucial interest for outdoors applications, are also examined in the range from -20 °C to 90 °C.