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Kuan-Chang Chang; Tsung-Ming Tsai; Ting-Chang Chang; Hsing-Hua Wu; Jung-Hui Chen; Yong-En Syu; Geng-Wei Chang; Tian-Jian Chu; Guan-Ru Liu; Yu-Ting Su; Min-Chen Chen; Jhih-Hong Pan; Jian-Yu Chen; Cheng-Wei Tung; Hui-Chun Huang; Ya-Hsiang Tai; Der-Shin Gan; Sze, S. M.
IEEE electron device letters, 03/2013, Volume: 34, Issue: 3Journal Article
Traditionally, a large number of silicon oxide materials are extensively used as various dielectrics for semiconductor industries. In general, silicon oxide cannot be used as resistance random access memory (RRAM) due to its insulating electrical properties. In this letter, we have successfully produced resistive switching and forming-free behaviors by zinc doped into silicon oxide. The current-voltage fitting data show that current transport mechanism is governed by Poole-Frenkel behavior in high-resistance state and Ohm's law in low-resistance state, consisting with filament theory. Additionally, good endurance and retention reliabilities are exhibited in the zinc-doped silicon oxide RRAM.
