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Lu, Li-Syuan; Chen, Guan-Hao; Cheng, Hui-Yu; Chuu, Chih-Piao; Lu, Kuan-Cheng; Chen, Chia-Hao; Lu, Ming-Yen; Chuang, Tzu-Hung; Wei, Der-Hsin; Chueh, Wei-Chen; Jian, Wen-Bin; Li, Ming-Yang; Chang, Yu-Ming; Li, Lain-Jong; Chang, Wen-Hao
ACS nano, 04/2020, Volume: 14, Issue: 4Journal Article
Palladium diselenide (PdSe2), a peculiar noble metal dichalcogenide, has emerged as a new two-dimensional material with high predicted carrier mobility and a widely tunable band gap for device applications. The inherent in-plane anisotropy endowed by the pentagonal structure further renders PdSe2 promising for novel electronic, photonic, and thermoelectric applications. However, the direct synthesis of few-layer PdSe2 is still challenging and rarely reported. Here, we demonstrate that few-layer, single-crystal PdSe2 flakes can be synthesized at a relatively low growth temperature (300 °C) on sapphire substrates using low-pressure chemical vapor deposition (CVD). The well-defined rectangular domain shape and precisely determined layer number of the CVD-grown PdSe2 enable us to investigate their layer-dependent and in-plane anisotropic properties. The experimentally determined layer-dependent band gap shrinkage combined with first-principle calculations suggest that the interlayer interaction is weaker in few-layer PdSe2 in comparison with that in bulk crystals. Field-effect transistors based on the CVD-grown PdSe2 also show performances comparable to those based on exfoliated samples. The low-temperature synthesis method reported here provides a feasible approach to fabricate high-quality few-layer PdSe2 for device applications.
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