It is very challenging to employ solution‐processed conducting films in large‐area ultrathin nanoelectronics. Here, spray‐coated Ti3C2Tx MXene films as metal contacts are successfully integrated into sub‐10 nm gate oxide 2D MoS2 transistor circuits. Ti3C2Tx films are spray coated on glass substrates followed by vacuum annealing. Compared to the as‐prepared sample, vacuum annealed films exhibit a higher conductivity (≈11 000 S cm−1) and a lower work function (≈4.5 eV). Besides, the annealed Ti3C2Tx film can be patterned through a standard cleanroom process without peeling off. The annealed Ti3C2Tx film shows a better band alignment for n‐type transport in MoS2 channel with small work function mismatch of 0.06 eV. The MoS2 film can be uniformly transferred on the patterned Ti3C2Tx surface and then readily processed through the cleanroom process. A large‐area array of Ti3C2Tx MXene–MoS2 transistors is fabricated using different dielectric thicknesses and semiconducting channel sizes. High yield and stable performance for these transistor arrays even with an 8 nm‐thick dielectric layer are demonstrated. Besides, several circuits are demonstrated, including rectifiers, negative‐channel metal–oxide–semiconductor (NMOS) inverters, and voltage‐shift NMOS inverters. Overall, this work indicates the tremendous potential for solution‐processed Ti3C2Tx MXene films in large‐area 2D nanoelectronics. Large‐area transistor circuits are successfully fabricated using solution‐processed Ti3C2Tx MXene as source/drain and gate contact electrodes, wafer‐scale MoS2 film as the channel, and an ultrathin HfO2/Al2O3 layer of about 8 nm as the dielectric layer. The high yield and performance uniformity of the device array indicate great potential for Ti3C2Tx MXene in large‐area ultrathin 2D electronics.