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  • On the forming-free operati...
    On the forming-free operation of HfOx based RRAM devices: Experiments and ab initio calculations
    Traore, B.; Vianello, E.; Molas, G.; Gely, M.; Nodin, J. F.; Jalaguier, E.; Blaise, P.; De Salvo, B.; Fonseca, L. R. C.; Xue, K.-H; Nishi, Y.

    2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC), 09/2013
    Conference Proceeding

    We show experimentally that the first reset operation of forming-free HfOx based RRAM devices is of bulk type where the reset current is area dependent. Moreover, the device pristine resistance shows a weak inverse proportionality to temperature, which we associate to a sub-stoichiometric HfOx matrix created during device fabrication. Finally, we use ab initio calculations to gain insight into the atomistic structure of these forming-free RRAM devices.

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