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  • Enhanced CDM-robustness for...
    Tzu-Cheng Kao; Jian-Hsing Lee; Chen-Hsin Lien; Chih-Hsien Wang; Kuang-Cheng Tai; Hung-Der Su

    2015 IEEE International Reliability Physics Symposium, 2015-April
    Conference Proceeding

    From the experimental measurements, the dominant charge source for a packaged IC chip during a charged-device model (CDM) ESD event is the capacitor between the die-attach plate and the metal bus line, C SUB . By adding a bonding wire between the die-attach plate and the Vss pin, a parallel inductor to the C SUB can be created. The CDM-robustness for the packaged IC chip is significantly improved because of this parallel LC resonance circuit.