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In-Plane Ferroelectric Tin Monosulfide and Its Application in a Ferroelectric Analog Synaptic DeviceKwon, Ki Chang; Zhang, Yishu; Wang, Lin; Yu, Wei; Wang, Xiaojie; Park, In-Hyeok; Choi, Hwa Seob; Ma, Teng; Zhu, Ziyu; Tian, Bingbing; Su, Chenliang; Loh, Kian Ping
ACS nano, 06/2020, Volume: 14, Issue: 6Journal Article
Two-dimensional ferroelectrics is attractive for synaptic device applications because of its low power consumption and amenability to high-density device integration. Here, we demonstrate that tin monosulfide (SnS) films less than 6 nm thick show optimum performance as a semiconductor channel in an in-plane ferroelectric analogue synaptic device, whereas thicker films have a much poorer ferroelectric response due to screening effects by a higher concentration of charge carriers. The SnS ferroelectric device exhibits synaptic behaviors with highly stable room-temperature operation, high linearity in potentiation/depression, long retention, and low cycle-to-cycle/device-to-device variations. The simulated device based on ferroelectric SnS achieves ∼92.1% pattern recognition accuracy in an artificial neural network simulation. By switching the ferroelectric domains partially, multilevel conductance states and the conductance ratio can be obtained, achieving high pattern recognition accuracy.
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