Resistive switching of IGZO-based memristors with electrode modulation and multi-value storage application

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Resistive switching of IGZO-based memristors with electrode modulation and multi-value storage application

Wang, Xiongfeng; Bao, Guocheng; Chen, Xiaopei; Pang, Yudong; Liao, Wugang

Applied physics. A, Materials science & processing, 08/2024, Volume: 130, Issue: 8

Journal Article

This work investigates the resistive switching in InGaZnO (IGZO) memristors with different electrodes, including Cu, Au, Ag, and Ti. Cu electrode device possesses the lowest switching voltage, while Au electrode device exhibits a good endurance of 100 repeated cycling tests. Ag electrode device shows a mediocre performance. As for the Ti electrode device, it has a relatively larger on/off ratio but a highest switching voltage. Corresponding mechanisms for the current conduction are explored, and models based on the experimental results are proposed to explain the RS mechanisms. Additionally, multi-value storage potential of Cu electrode device is also investigated by varying compliance current.

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Wang, Xiongfeng | Bao, Guocheng | Chen, Xiaopei | Pang, Yudong | Liao, Wugang

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