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Liao, L; Zhang, Z; Yan, B; Zheng, Z; Bao, Q L; Wu, T; Li, C M; Shen, Z X; Zhang, J X; Gong, H; Li, J C; Yu, T
Nanotechnology, 02/2009, Volume: 20, Issue: 8Journal Article
We report the properties of a field effect transistor (FET) and a gas sensor based on CuO nanowires. CuO nanowire FETs exhibit p-type behavior. Large-scale p-type CuO nanowire thin-film transistors (10(4) devices in a 25 mm(2) area) are fabricated and we effectively demonstrate their enhanced performance. Furthermore, CuO nanowire exhibits high and fast response to CO gas at 200 degrees C, which makes it a promising candidate for a poisonous gas sensing nanodevice.
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