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Prasai, Dhiraj; Klots, Andrey R; Newaz, AKM; Niezgoda, J. Scott; Orfield, Noah J; Escobar, Carlos A; Wynn, Alex; Efimov, Anatoly; Jennings, G. Kane; Rosenthal, Sandra J; Bolotin, Kirill I
Nano letters, 07/2015, Volume: 15, Issue: 7Journal Article
We investigate near-field energy transfer between chemically synthesized quantum dots (QDs) and two-dimensional semiconductors. We fabricate devices in which electrostatically gated semiconducting monolayer molybdenum disulfide (MoS2) is placed atop a homogeneous self-assembled layer of core–shell CdSSe QDs. We demonstrate efficient nonradiative Förster resonant energy transfer (FRET) from QDs into MoS2 and prove that modest gate-induced variation in the excitonic absorption of MoS2 leads to large (∼500%) changes in the FRET rate. This in turn allows for up to ∼75% electrical modulation of QD photoluminescence intensity. The hybrid QD/MoS2 devices operate within a small voltage range, allow for continuous modification of the QD photoluminescence intensity, and can be used for selective tuning of QDs emitting in the visible-IR range.
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