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Yang, Jeong Yong; Oh, Seung Yoon; Yeom, Min Jae; Kim, Seokgi; Lee, Gyuhyung; Lee, Kyusang; Kim, Sungkyu; Yoo, Geonwook
IEEE electron device letters, 08/2023, Volume: 44, Issue: 8Journal Article
In this study, we demonstrate ferroelectric GaN high-electron mobility transistors (HEMTs) with a sputtered AlScN gate dielectric, exhibiting a large memory window of ~ 14.6 V and a high on/off ratio of ~ 10 8 . The strong polarization of AlScN layer contributes to the remarkably large threshold voltage (V th ) tuning range with counterclockwise hysteresis depending on voltage sweep ranges and pulsed parameters. Moreover, a recessed-gate structure enables the pulsed enhancement and depletion mode switching. The reconfigurable V th via pulse modulation further allows feasibility of NOR logic gate with the single ferroelectric GaN HEMT.
