E-resources
Peer reviewed
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Qiu, Y J; Xu, Y H; Xu, R M; Lin, W G
Electronics letters, 02/2013, Volume: 49, Issue: 5Journal Article
A broadband hybrid power amplifier using a gallium nitride (GaN) high electron mobility transistor (HEMT) is presented. A discrete GaN HEMT bare die with 1.25 mm of gate width is used, and a compact size of 8.3 × 12.7 mm is achieved by using a feedback technique based on lumped elements. The power amplifier operates from 100 to 1000 MHz, and shows more than 12.8 dB gain and higher than 30.7 dBm output power in the overall bandwidth. Power added efficiency of 61.3% was acquired at the mid-band frequency and more than 54.5% throughout the bandwidth. PUBLICATION ABSTRACT
