Near-infrared (NIR) light-emitting materials show excellent potential applications in the fields of military technology, bioimaging, optical communication, organic light-emitting diodes (OLEDs), etc. Recently, thermally activated delayed fluorescence (TADF) emitters have made historic developments in the field of OLEDs. These metal-free materials are more attractive because of efficient reverse intersystem crossing processes which result in promising high efficiencies in OLEDs. However, the development of NIR TADF emitters has progressed at a relatively slower pace which could be ascribed to the difficult promotion of external quantum efficiencies. Thus, increasing attention has been paid to NIR TADF emitters. In this review, the recent progress of NIR TADF emitters has been summarized along with their molecular design strategies and photophysical properties, as well as electroluminescence performance data of their OLEDs, respectively. This review presents the recent progress of NIR TADF emitters along with their molecular design strategies and photophysical properties, as well as the electroluminescence performance data of the emitters and their OLEDs.