The effects of N-doping, and N-In co-doping on ZnO films were studied by analyzing the structural, electrical, and optical properties of the films prepared by using an ultrasonic spray pyrolysis (USP) method. According to scanning electron microscopy (SEM) data, all films had very complex surface structures. Their polycrystallinity were also proven by using an X-ray diffraction method. The Hall-effect measurement showed that both the undoped and the N-doped ZnO films exhibited n-type conductivity and that the N-In co-doped ZnO film showed p-type conductivity. In the extended X-ray absorption fine structure (EXAFS) analysis, the number of oxygen atoms in the N-In codoped ZnO films was found to be larger than that in the N-doped and the undoped ZnO films. The photoluminescence spectra also showed that the N-In co-doping suppressed the concentration of oxygen vacancies in the ZnO films. Through an effective incorporation of indium atoms, more oxygen atoms seem to have been introduced into the lattice of the N-In co-doped ZnO films.