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  • Influence of Device Geometr...
    Cicoira, Fabio; Sessolo, Michele; Yaghmazadeh, Omid; DeFranco, John A.; Yang, Sang Yoon; Malliaras, George G.

    Advanced materials (Weinheim), March 5, 2010, Volume: 22, Issue: 9
    Journal Article

    The response of PEDOT:PSS planar electrochemical transistors to H2O2 can be tuned by varying the ratio between the areas of the channel and the gate electrode. Devices with small gates show lower background signal and higher sensitivity. The detection range, on the other hand, is found to be rather independent of the gate/channel area ratio.