E-resources
Peer reviewed
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Xu, S.R.; Hao, Y.; Zhang, J.C.; Zhou, X.W.; Yang, L.A.; Zhang, J.F.; Duan, H.T.; Li, Z.M.; Wei, M.; Hu, S.G.; Cao, Y.R.; Zhu, Q.W.; Xu, Z.H.; Gu, W.P.
Journal of crystal growth, 07/2009, Volume: 311, Issue: 14Journal Article
Non-polar (1 1 2¯ 0) a-plane GaN films have been grown by low-pressure metal-organic vapor deposition on r-plane (1 1¯ 0 2) sapphire substrate. We report on an approach of using AlN/AlGaN superlattices (SLs) for crystal quality improvement of a-plane GaN on r-plane sapphire. Using X-ray diffraction and atomic force microscopy measurements, we show that the insertion of AlN/AlGaN SLs improves crystal quality, reduces surface roughness effectively and eliminates triangular pits on the surface completely.
