In current paper nanoheterostructure optimization for LED and phototransistor usage is discussed. Special doping into quantum wells and barriers by Indium atoms was investigated. By simulation improved quantum sized active region was detected which increases quantum efficiency and sensitivity upto 10%. Photoluminescence spectral curve and Peak lambda of the InGaN/GaN nanoheterostructure with different Indium concentration across wafer were investigated. •Nanoheterostructure optimization for LED and photodetector usage is discussed.•Special doping into quantum wells and barriers by Indium atoms was investigated.•QW barriers doped by Indium(7%) and impurity (1018cm−3) increase QE and sensitivity.•It was detected that by doping I-V curves could be shifted to a lower-voltage area.