Spectral sensitivity characteristics simulation for silicon p-i-n photodiode

E-resources

PDF

Peer reviewed Open access

Spectral sensitivity characteristics simulation for silicon p-i-n photodiode

Urchuk, S U; Legotin, S A; Osipov, U V; Elnikov, D S; Didenko, S I; Astahov, V P; Rabinovich, O I; Yaromskiy, V P; Kuzmina, K A

Journal of physics. Conference series, 11/2015, Volume: 643, Issue: 1

Journal Article

In this paper the simulation results of the spectral sensitivity characteristics of silicon p-i-n-photodiodes are presented. The analysis of the characteristics of the semiconductor material (the doping level, lifetime, surface recombination velocity), the construction and operation modes on the characteristics of photosensitive structures in order to optimize them was carried out.

Keep searching

Author

Access to the JCR database is permitted only to users from Slovenia. Your current IP address is not on the list of IP addresses with access permission, and authentication with the relevant AAI accout is required.

Year	Impact factor		Edition		Category		Classification
Year	JCR	SNIP	JCR	SNIP	JCR	SNIP	JCR	SNIP

Links to authors' personal bibliographies	Links to information on researchers in the SICRIS system

Source: Personal bibliographies and: SICRIS

Upload image

Shelf entry

Adding material to shelf was successful.

Adding material to shelf failed.

It was not necessary to add the material to the shelf.

Permalink

E-mail

Impact factor

Select the library membership card:

DRS, in which the journal is indexed

Citations

Theme