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Jani, Hariom; Linghu, Jiajun; Hooda, Sonu; Chopdekar, Rajesh V.; Li, Changjian; Omar, Ganesh Ji; Prakash, Saurav; Du, Yonghua; Yang, Ping; Banas, Agnieszka; Banas, Krzysztof; Ghosh, Siddhartha; Ojha, Sunil; Umapathy, G. R.; Kanjilal, Dinakar; Ariando, A.; Pennycook, Stephen J.; Arenholz, Elke; Radaelli, Paolo G.; Coey, J. M. D.; Feng, Yuan Ping; Venkatesan, T.
Nature communications, 03/2021, Volume: 12, Issue: 1Journal Article
Abstract Antiferromagnetic insulators are a ubiquitous class of magnetic materials, holding the promise of low-dissipation spin-based computing devices that can display ultra-fast switching and are robust against stray fields. However, their imperviousness to magnetic fields also makes them difficult to control in a reversible and scalable manner. Here we demonstrate a novel proof-of-principle ionic approach to control the spin reorientation (Morin) transition reversibly in the common antiferromagnetic insulator α-Fe 2 O 3 (haematite) – now an emerging spintronic material that hosts topological antiferromagnetic spin-textures and long magnon-diffusion lengths. We use a low-temperature catalytic-spillover process involving the post-growth incorporation or removal of hydrogen from α-Fe 2 O 3 thin films. Hydrogenation drives pronounced changes in its magnetic anisotropy, Néel vector orientation and canted magnetism via electron injection and local distortions. We explain these effects with a detailed magnetic anisotropy model and first-principles calculations. Tailoring our work for future applications, we demonstrate reversible control of the room-temperature spin-state by doping/expelling hydrogen in Rh-substituted α-Fe 2 O 3 .
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