Ferroelectric bismuth vanadate (Bi(2)VO(5.5)) thin films were successfully fabricated on n-type Si (100) substrate by sol-gel method. The microstructures of the films were investigated by x-ray diffraction and atomic force microscopy. The results indicate that Bi(2)VO(5.5) thin films show a good match with the n-Si substrate and a high c-axis preferred orientation with a uniform grain distribution. The investigation on the electrical properties of Bi(2)VO(5.5) thin films indicates that Bi(2)VO(5.5) thin films show good capacitance-voltage characteristics, and the memory window is larger than 0.4V when the gate voltage is plus or minus 4V. The leakage current density is about 5x10(-8) Acm(-2) when the applied voltage is 3.2V. The dielectric constant and dielectric loss measured at 1 kHz are 95 and 0.22, respectively. All the results indicate that Bi(2)VO(5.5) thin films have potential applications in ferroelectric memory devices.