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  • On possible occurence of quantum well states in ICB deposited metal/Si Schottky structures
    Korošak, Dean ; Cvikl, Bruno
    Experimentaly observed bias dependent induced interface charge density in ionized cluster beam (ICB) deposited Shottky structures as determined from capacitance-voltage of the junction has been ... sufficiently well described with a model function exhibiting a sharp maximum for the charge desity bias dependence. In the present work we focus ourselves on the investigation of the connection of the microscopic electronic structure of the contact and the macroscopic model parameters and the expression for the ideality factor is derived in the limit where the majority of the interface charge is determined by the quantum well states. Finally the transition from rectifying into ohmic behaviour observed in ICB samples using large acceleration voltages in discussed using high values of ideality factor.
    Vir: Proceedings (Str. 145-149)
    Vrsta gradiva - prispevek na konferenci
    Leto - 1999
    Jezik - angleški
    COBISS.SI-ID - 4874774

vir: Proceedings (Str. 145-149)
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