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  • Surface composition changes in GaN induced by argon ion bombardment
    Kovač, Janez, 1965- ; Zalar, Anton
    Wide-band GaN semiconductor has been used to fabricate efficient blue-green light emitting diodes, laser diodes and high power/high temperature eletronic devices since many problems regarding ... long-life characteristics had been resolved in last years[1]. Knowledge of ion bombardment-induced surface composition changes is important in the quantitative AES/XPS analysis. Surface preparation methods as argon-milling can also affect stoichometric composition of the GaN surface and thus influence electronic properties of the subsequently prepared metal/GaN intefaces. We analysed the dependence of preferential sputtering of components on ion energies and on angle of incidence of argon ions. The GaN thin films prepared on smooth Si substrate were bombarded with argon ions of energy between 0.5 and 5 keV at incidence angles between 22° and 72° with respect to the surface normal. AES signals N KLL and Ga LMM were acquired after steady state surface composition was reached. The results show that nitrogen is preferentially sputtered. This effect is stronger at higher projectile energies and at smaller incidence angles. The experimetal results are discussed in the frame of the models of preferential sputtering for compound semiconductors and compared to the computer simulations. The comparison with some other commonly used binary compound as TiN and GaAs is also presented.
    Vir: Book of abstracts (Str. 146)
    Vrsta gradiva - prispevek na konferenci ; neleposlovje za odrasle
    Leto - 2001
    Jezik - angleški
    COBISS.SI-ID - 62946

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