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  • Study of interfacial reactions between Si thin film and GaN substrate by synchrotron radiation
    Kovač, Janez, 1965- ; Vesel, Alenka ; Zalar, Anton
    Wide-band gap GaN semiconductor has been used to fabricate efficient blue-green light emittin diodes, laser diodes and high powerfull/high temperature electronic devices since many problems regarding ... long-life characteristics were resolved in the last years. However, the lack of suitable substrate which is lattice matched and thermaly compatible wit GaN has still hindered the growth of high-quality GaN films. The potential of integration of GaN with well-established Si-based microelectronics technology motivated us to study the GaN-Si interactions. Oposite to conventiona approach in other studies, where GaN films are prepared on Si substrate, we deposited thin Si film on GaN substrate. Scanning photoemission microscopy with sinchrothron radiation from Elettra light source has been used to study interface between the Si thin films in a form of latterally confined patch and the GaN substrate. We followed the evolution of Si 2p, Ga 3d and N 1s spectra as a function of temperature. The interfacial reactions, morphology, phase composition and electronic properties at the Si-GaN interface were studied after stepwise annealing up to 900°C. Our results reveal about 700°C the reaction of N wit Si to form silicon nitride.
    Vir: Proceedings (Str. 107-112)
    Vrsta gradiva - prispevek na konferenci ; neleposlovje za odrasle
    Leto - 2002
    Jezik - angleški
    COBISS.SI-ID - 67810

vir: Proceedings (Str. 107-112)
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