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Univerza v Novi Gorici (PNG)
  • Epitaxial growth and interface parameters of Si layers on GaAs(001) and AlAs(001) substrates
    Bratina, Gvido ...
    Thin Si epitaxial layers (1-14 monolayers) were fabricated by molecular bem epitaxy on GaAs (001) and AlAs (001) substrates also obtained by molecular beam epitaxy on GaAs (001) wafers. In situ ... studies by monochromatic x-ray photoemission show initial layer-by-layer Si growth on both substrates with only minor Si indiffusion. Reflection high energy electron diffraction analysis shows good epitaxy with some indication of three-dimensional growth at Si coverages higher than 4-8 monolayers. Comparison of our results with recent heterojunction theories suggests that the best predictions for the band offsets are obtained with the model solid approach using deformation potentials to describe the effect of strain. The Si epitaxial layers are found to remain stable upon growth of AlAs or GaAs layers on top of the Si layers.
    Vir: Journal of vacuum science & technology. B, Microelectronics processing and phenomena. - ISSN 0734-211X (Vol. 9, No. 4, 1991, str. 2225-2232)
    Vrsta gradiva - članek, sestavni del ; neleposlovje za odrasle
    Leto - 1991
    Jezik - angleški
    COBISS.SI-ID - 90875

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