The operation of p-n PbS-Si heterojunction devices at 200 K and 300 K is reported. The I-V and C-V characteristics are presented and compared to those of p-p heterojunctions. At 200 K and a ...wavelength of 2.7 µm, the open circuit detectivity and voltage responsivity achieved are D * λ (100 Hz, 1 Hz) = 4 × 10 9 cm Hz 1/2 /W and R V, λ (100 Hz) = 4 × 10 3 V/W. Under the same conditions but in short circuit, zero bias operation, the detector performance achieved is, D * λ (100 Hz, 1 Hz = 3.4 × 10 9 cm Hz 1/2 /W and R I, λ , = 4.8 × 10 -4 A/W.
MoSi2-gate MOSFET's for VLSI Chow, T.P.; Steckl, A.J.; Motamedi, M.E. ...
1979 International Electron Devices Meeting,
1979
Conference Proceeding
Refractory metal silicide gate n-channel MOSFET's have been fabricated by RF sputtering from a hot-pressed MoSi 2 alloy target. The annealed MoSi 2 sheet resistance was 2Ω/□. The MOSFET's were ...fabricated using plasma etching, projection alignment and a fully ion-implanted process. Typical values for a 1.7 × 1.7 µm 2 linear MOSFET are a threshold voltage of 1- 1.5V and a transconductance of 50-100 µmho. Short channel (length and width) and substrate effects on the threshold voltage are demonstrated.
A major limitation of high resolution lithography techniques is the throughput, or the ability to create the appropriate image patterns in the resist at high speed. The resist sensitivity to incident ...radiation is a key factor in limiting the throughput. The authors have explored the use of polymer grafting techniques to obtain image enhancement by increasing the sensitivity of the resist to electrons(l), x-rays(2), ions(3)and deep-UV photons. In this paper we first review the basic grafting process and mechanisms. Then, examples of grafting induced image enhancement are given. Finally, a quantitative comparison is presented for resist sensitivity gains under various irradiations.
The superchips are coming! Units under development in industrial and academic laboratories both in the United States and Japan will integrate millions of logic gates into a single package the size of ...a man's hand. Ultimately, the circuits will encompass an entire wafer. In this size the superchips may be termed wafer-scale integrated (WSI) systems.
