In the framework of the large hadron collider (LHC) upgrade project, new materials are proposed for the vacuum. Amorphous carbon deposited onto the vacuum-chamber wall is examined as a coating with a ...low secondary electron emission rate for superconducting systems designed to upgrade the LHC, i.e., to increase the luminosity of the machine (HL-LHC). Since protons will generate synchrotron radiation with a critical energy of ~10 eV and a flux of 10
16
photon m
–1
s
–1
, it is important to study the effect of photons on a surface covered with amorphous carbon at room and cryogenic temperatures. The construction and parameters of the setup on the new synchrotron beamline of the VEPP-2000 booster are described. The first results of measuring the photodesorption coefficient are also presented.
Andrei Yurievich Khrennikov and his Research Anashin, V. S.; Dragovich, B.; Kochubei, A. N. ...
P-adic numbers, ultrametric analysis, and applications,
10/2018, Letnik:
10, Številka:
4
Journal Article
Recenzirano
This paper contains a brief review of a very diverse and vast scientific work of Andrei Yurievich Khrennikov on the occasion of his 60th birthday.
The Budker Institute of Nuclear Physics (BINP) project of the VEPP-2000 electron-positron Round Colliding Beams in the energy range 2*(0,25÷1) GeV has an average synchrotron radiation (SR) power of ...up to 1,0 kW/m at maximum currents Ie-=Ie+=200 mA. An overview of the VEPP-2000 complex vacuum system after the upgrade of injection complex at BINP is described here. This paper presents the dependences of photodesorption yield for aluminum and lifetime versus accumulated dose for future SRF “SKIF” (Siberian Research Facility “SKIF”).
Radiation response of bipolar devices irradiated under various electrical modes and dose rates at high doses has been studied. A nonlinear numerical model including ELDRS effects and electric field ...reduction at high doses has been developed and validated. Dose degradation of a bipolar transistor's gain factor at different dose rates and electrical modes has been simulated and explained in a unified way, based on dependence of the charge yield in isolation oxides on dose rates and electric fields. It has been shown that at high doses one needs to use a nonlinear, self-consistent numerical approach, accounting for simultaneous suppression of the oxide electric field induced by trapped charge. Correspondingly, two types of degradation saturation have been revealed: (i) due to simultaneous thermal annealing, and (ii) due to total dose dependent electric field reduction in oxides. The former implies proportionality of the saturation dose and degradation level to dose rate, the latter permits dose rate independent saturation levels of degradation.
We report results of a search for narrow resonances in e+e− annihilation at center-of-mass energies between 1.85 and 3.1 GeV performed with the KEDR detector at the VEPP-4M e+e− collider. The upper ...limit on the leptonic width of a narrow resonance ΓeeR⋅Br(R→hadr)<120 eV has been obtained (at 90% C.L.).
We report results of a search for narrow resonances in e super(+e) super(-) annihilation at center-of-mass energies between 1.85 and 3.1 GeV performed with the KEDR detector at the VEPP-4M e ...super(+e) super(-) collider. The upper limit on the leptonic width of a narrow resonance inline image has been obtained (at 90% C.L.).
The results on SEE sensitivity of 0.5 \mu m SOI CMOS microprocessor are presented and discussed. The comparative analysis of different test techniques (particle accelerator, pulsed laser technique ...and ^{252} Cf fission source) is provided for the cache. The possible sources of discrepancies between test results and the ways of data correction and methods of testing techniques' accuracy improvement are discussed.
We study experimentally and theoretically the micro-dose induced drain-source leakage current in the trench power MOSFETs under irradiation with high-LET heavy ions. We found experimentally that ...cumulative increase of leakage current occurs by means of stochastic spikes corresponding to a strike of single heavy ion into the MOSFET gate oxide. We simulate this effect with the proposed analytic model allowing to describe (including Monte Carlo methods) both the deterministic (cumulative dose) and stochastic (single event) aspects of the problem. Based on this model the survival probability assessment in space heavy ion environment with high LETs was proposed.
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