Organosiloxane based spin on planarizing dielectrics (PTS‐E and PTS‐R) were developed for application in flat panel displays as a replacement to conformal chemical vapor deposited SiNx. Here we ...demonstrate the successful use of siloxane‐based material as a passivation layer for active matrix α‐Si thin film transistors (TFT) on both rigid and flexible substrates.
— A low‐temperature amorphous‐silicon (a‐Si:H) thin‐film‐transistor (TFT) backplane technology for high‐information‐content flexible displays has been developed. Backplanes were integrated with ...frontplane technologies to produce high‐performance active‐matrix reflective electrophoretic ink, reflective cholesteric liquid crystal and emissive OLED flexible‐display technology demonstrators (TDs). Backplanes up to 4 in. on the diagonal have been fabricated on a 6‐in. wafer‐scale pilot line. The critical steps in the evolution of backplane technology, from qualification of baseline low‐temperature (180°C) a‐Si:H process on the 6‐in. line with rigid substrates, to transferring the process to flexible plastic and flexible stainless‐steel substrates, to form factor scale‐up of the TFT arrays, and finally manufacturing scale‐up to a Gen 2 (370 × 470 mm) display‐scale pilot line, will be reviewed.
A low temperature, 180 °C, amorphous Si (a‐Si:H) process on bonded polyethylene naphthalate substrates is discussed and a 4.1‐inch QVGA active matrix (AM) phosphorescent OLED display is demonstrated. ...The n‐channel thin‐film transistors (TFTs) exhibited saturation mobilities of 0.773 cm2/V‐sec, layer to layer registration distortion less than 10ppm and low defectivity. The efficiency of the OLED display is 39 cd/A at 500 nits.
In this paper we describe solutions to effectively address critical challenges in direct fabrication of amorphous silicon thin film transistor (TFTs) arrays for active matrix flexible displays. For ...both metal foil and plastic flexible substrates a manufacturable handling protocol in automated display-scale equipment is required. We have successfully demonstrated a temporary bonding protocol that required development of new enabling materials, tools and processes. For metal foil substrates, the principal challenges are planarization and electrical isolation, and management of stress (CTE mismatch) during TFT fabrication. For plastic substrates, the principal challenges are dimensional instability management in conjunction with manufacturing-ready temporary adhesives. Solutions required a systems-level approach to address the challenges of the substrates and their handling simultaneously.
A low temperature, 180 °C, amorphous Si (a‐Si:H) process on bonded stainless steel substrates is discussed and a 3.8‐inch QVGA active matrix (AM) electrophoretic display as well as a 64×64 ...electrophoretic display with integrated column drivers are demonstrated. The n‐channel thin‐film transistors (TFTs) exhibited saturation mobilities of 0.7 cm2/V‐sec, median drive currents of 26.2 μA and low defectivity.
Future flexible OLED displays for army applications Forsythe, E.W.; Shi, J.; Liu, S. ...
2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum electronics and Laser Science Conference
Conference Proceeding
Organic light emitting diodes have been fabricated on an active matrix backplane from an 180C processed amorphous Si thin film transistors on polyethylene naphthalate (PEN) substrates. Organic light ...emitting diodes have been fabricated on the active matrix backplane. The presentation will include organic material development from ARL in the context of future Army applications.
The monolithic integration of heterostructure tuneling diodes with other semiconductor devices, such as HFET's, creates novel, quantum functional devices and circuits. The enhanced functionality of ...these devices enables design of both digital and analog circuits with reduced complexity, smaller size and better performance. Several types of QMMIC VCO's operating in L-band frequency range have been designed and characterized. VCO's achieved output power of 8-10 dBm at L-band frequency range. All VCO's exhibited very low phase noise (in the range of -107 to -115 dBc/Hz) at 1.0 MHz away from the carrier frequency.
Retinal-Vein Occlusion Lazo-Langner, Alejandro; Squizzato, Alessandro; Ageno, Walter
The New England journal of medicine,
03/2011, Letnik:
364, Številka:
10
Journal Article
Recenzirano
To the Editor:
In their recent article (Nov. 25 issue), Wong and Scott did not discuss the potential role of anticoagulants, particularly low-molecular-weight heparins, in the treatment of ...retinal-vein occlusion, a common condition for which there is no universally accepted therapy.
1
Although the pathophysiology of retinal-vein occlusion is related to the development of a thrombotic occlusion, most interventions aim to limit its long-term complications (e.g., neovascularization) rather than hampering the thrombotic process and hence its consequences. Fibrinolytics, antiplatelet agents, and anticoagulants have all been evaluated for the treatment of retinal-vein occlusion.
We recently reported the results of a pooled analysis . . .
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