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zadetkov: 79
1.
  • Radioactive (90Y) upconvers... Radioactive (90Y) upconversion nanoparticles conjugated with recombinant targeted toxin for synergistic nanotheranostics of cancer
    Guryev, Evgenii L.; Volodina, Natalia O.; Shilyagina, Natalia Y. ... Proceedings of the National Academy of Sciences - PNAS, 09/2018, Letnik: 115, Številka: 39
    Journal Article
    Recenzirano
    Odprti dostop

    We report combined therapy using upconversion nanoparticles (UCNP) coupled to two therapeutic agents: beta-emitting radionuclide yttrium-90 (90Y) fractionally substituting yttrium in UCNP, and a ...
Celotno besedilo
Dostopno za: BFBNIB, NMLJ, NUK, PNG, SAZU, UL, UM, UPUK

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2.
  • LYOPHOBIC SOLS «...»® AS ADDITIVES TO CHEMICAL ADMIXTURES INTO CONCRETE
    Alferov, Zhores I Nanotehnologii v stroitelʹstve, 01/2023, Letnik: 15, Številka: 6
    Journal Article
    Recenzirano
    Odprti dostop

    The article presents an innovative approach to enhancing cement concrete, bordering on a scientific breakthrough, and explains it in a way that is easy to understand. The core concept is the ...
Celotno besedilo
Dostopno za: NUK, UL, UM, UPUK
3.
Celotno besedilo
Dostopno za: CMK, CTK, FMFMET, IJS, NUK, PNG, UM

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4.
  • The Double Heterostructure:... The Double Heterostructure: The Concept and its Applications in Physics, Electronics, and Technology (Nobel Lecture)
    Alferov, Zhores I. ChemPhysChem, September 17, 2001, Letnik: 2, Številka: 8-9
    Journal Article
    Recenzirano
    Odprti dostop

    The art and science of heterostructure design has not remained still since its founding: While the theoretical principles initially advanced rapidly, experimental realization initially lagged until ...
Celotno besedilo
Dostopno za: FZAB, GIS, IJS, KILJ, NLZOH, NUK, OILJ, SAZU, SBCE, SBMB, UL, UM, UPUK
5.
  • Negative Characteristic Tem... Negative Characteristic Temperature of InGaAs Quantum Dot Injection Laser
    Zhukov, Alexey E.; Ustinov, Victor M.; Egorov, Anton Yu ... Japanese Journal of Applied Physics, 06/1997, Letnik: 36, Številka: 6S
    Journal Article
    Recenzirano

    The range of negative characteristic temperatures in temperature dependences of threshold current density of low-threshold (In, Ga)As/(Al, Ga)As quantum dot injection lasers has been observed. A ...
Celotno besedilo
Dostopno za: NUK, UL
6.
  • Targeting cancer cells by u... Targeting cancer cells by using an antireceptor antibody-photosensitizer fusion protein
    Serebrovskaya, Ekaterina O; Edelweiss, Eveline F; Stremovskiy, Oleg A ... Proceedings of the National Academy of Sciences - PNAS, 06/2009, Letnik: 106, Številka: 23
    Journal Article
    Recenzirano
    Odprti dostop

    Antibody-photosensitizer chemical conjugates are used successfully to kill cancer cells in photodynamic therapy. However, chemical conjugation of photosensitizers presents several limitations, such ...
Celotno besedilo
Dostopno za: BFBNIB, NMLJ, NUK, PNG, SAZU, UL, UM, UPUK

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7.
  • Self-Organized InGaAs Quant... Self-Organized InGaAs Quantum Dots for Advanced Applications in Optoelectronics
    Ledentsov, Nikolai N.; Bimberg, Dieter; Ustinov, Victor M. ... Japanese Journal of Applied Physics, 2002, Letnik: 41, Številka: Part 1, No. 2B
    Journal Article
    Recenzirano

    Authors report on the fabrication of quantum dot (QDs) heterostructures for applications in optoelectronics. Different kinds of QDs are currently used: (i) 3-D quantum dots obtained by ...
Celotno besedilo
Dostopno za: NUK, UL
8.
Celotno besedilo
Dostopno za: NUK, UL, UPUK
9.
  • Progress in Quantum Dot Las... Progress in Quantum Dot Lasers: 1100 nm, 1300 nm, and High Power Applications
    Grundmann, Marius; Heinrichsdorff, Frank; Ledentsov, Nikolai N. ... Japanese Journal of Applied Physics, 2000, Letnik: 39, Številka: 4S
    Journal Article
    Recenzirano

    Quantum dot (QD) lasers have decisive advantages compared to quantum well lasers. Zero-dimensional charge carrier localization and reduction of charge carrier diffusion result in reduced ...
Celotno besedilo
Dostopno za: NUK, UL
10.
  • InGaAs/GaAs quantum dot las... InGaAs/GaAs quantum dot lasers with ultrahigh characteristic temperature (T0 = 385 K) grown by metal organic chemical vapour deposition
    MAXIMOV, M. V; KOCHNEV, I. V; LEDENTSOV, N. N ... Japanese Journal of Applied Physics, 06/1997, Letnik: 36, Številka: 6B
    Conference Proceeding, Journal Article
    Recenzirano

    Low threshold current density (AlInGa)As/GaAs lasers based on InGaAs quantum dots (QDs) are grown by metal organic chemical vapour deposition (MOCVD). Quantum dots deposited at 490° C and covered ...
Celotno besedilo
Dostopno za: NUK, UL
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zadetkov: 79

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