In this research article, the radiation shielding properties of newly developed high Fe content amorphous alloys were reported. The chemical compositions of these alloys were Fe83B9C3Si4P1, ...Fe84B10C2Si2P, Fe85B8C3Si3P1, and Fe86B5C8P1. Monte Carlo simulation method was successfully used to study the problem of radiation propagation through theses alloys under suitable boundary conditions of vacuum. Our results indicate that MAC value decays as photon energy grows varying from 0.0997 to 0.0387, 0.0997–0.0387, 0.0998–0.0387, and 0.0998–0.0387 cm2/g for FBCSP1, FBCSP2, FBCSP3, and FBCSP4 respectively. However, gradual increase was observed in both parameters of mean free path (MFP) and half value layer (HVL) as energy increases. The maximum and minimum value of the effective atomic number (Zeff) was 23.09 and 22.97, 23.29 and 23.17, 23.41 and 23.30, and 23.4 and 23.29 for FBCSP1– FBCSP4 respectively. FNRC (Fast Neutron Removal Cross-section) values were: 0.1538, 0.1538, 0.1536, and 0.1561cm-1 for FBCSP1– FBCSP4 respectively. Moreover, an extensive comparison was reported between the radiation shielding proficiency of the studied alloys and that of the traditional materials. It can be concluded that, FBCSP alloys can conveniently replace the traditional materials in photon shielding application especially when space is a constraint.
•High Fe content amorphous alloys were reported for radiation shielding applications.•Simulations were successfully applied in the design of vacuum system for radiation propagation.•The optimum thickness for narrow beam transmission geometry is less than 1 MFP.•FBCSP alloys can conveniently replace the traditional materials.
This study investigated the radioactivity of groundwater and bottom silt from wells in southern Sinai, Egypt. Eight well sites were chosen (Abu Redis, Abu Zenima, and Al-Tor) and composite samples of ...water and silt were created from each. Southern Sinai well water (Egypt) was safe for drinking based on tested elements (
226
Ra < 300 Bq/L,
232
Th < 100 Bq/L). However, some bottom silt samples showed elevated
226
Ra,
232
Th, and
222
Rn-, potentially posing health risks through inhalation or ingestion. Further investigation is needed on these specific silt samples due to potential internal and external radiation exposure.
The current study reveals the impact of MHD heat transfer properties of an incompressible viscous fluid were numerically solved across a continuously expanding horizontal cylinder immersed in a ...porous material in the existence of internal heat production/sink. The partial differential equations which govern the fluid flow with boundary constraints were converted to a collection of non-linear ODE’s with the aid of similarity variables and then numerically solved by using Keller-Box approach. The components of fluid velocity, temperature, as well as friction factor, and rate of heat transfer were all calculated numerically. Graphs and tables illustrate the fluid velocity and heat transfer properties for several Prandtl numbers, and magnetic parameters. The main goal of the current findings is to examine how the magnetic field M, Pr, and the heat absorption/generation factor Q influence the velocity and temperature gradients along a stretching cylinder. It is projected that the rise in the curvature parameter and the porosity factor would contribute to the enhancement of the temperature gradient in the boundary layer area around the cylinder.
A First-principles study was accomplish to examine the various characteristics of 2-D hetero-junction layer structure Molybdenum disulfide (MoS
2
) material such as structural, electronic, and ...optical properties through variation of external static pressure 0–100 GPa with a 4-steps escalations such as 0, 50, 75 100 GPa. Scheming bandgap tuning by the external static pressure engineering of 2-D layered MoS
2
is a relatively new approach for tailoring different properties. The bandgap of MoS
2
is found to be decreasing from 1.65 to 0.0 eV with increased external static pressure from 0 to 100 GPa. By increasing the external static pressure in MoS
2
extra gamma states are produced into an energy band gap (E
g
). The bandgap nature originated indirect moreover bandgap represented that material is an eminent semiconductor. MoS
2
is a proficient photo-catalysis have a large surface area for light absorption and decreases the electron–hole pairs recombination rate and increases the charge transport. A significant decrement is found in the reflectivity due to the decrement in the bandgap. It is also examined that increment in energy adsorption peaks at 0 to 35 eV furthermore optical conductivity peaks shifts at larger energy band through increment the static pressure engineering. The optical properties significantly increased by the decrement of E
g
. MoS
2
has high energy absorption, optical conductivity, and refractive index and is an appropriate material for photocatalytic applications.
The main focus of this framework is the preparation of CdTe nanocrystalline thin films (~120 nm) on single crystal p-Si wafers (270 μm) with Miller index (100) using thermal evaporation. Then, the ...In/n-CdTe/p-Si/Al solar cell was successfully fabricated. The dark I–V characteristics for the fabricated solar cell have been determined in range of 300–375 K and an applied voltage range of − 2 to 2 V. The fabricated solar cell's behavior was thoroughly explained. As a result, the important parameters for the fabricated solar cell such as the rectification ratio
RR
, the junction resistance
R
J
, ideality factor of solar cell
n
, the shunt resistance
R
sh
, the series resistance
R
s
, the barrier height created at the interface between the CdTe thin film and the p-Si wafer
ϕ
b
, the energy of trap level
E
t
and the activation energy of carriers’s recombination in the depletion region
Δ
E
were determined. Finally, the Poole–Frenkel
β
PF
and Schottky
β
S
parameters were computed.
This paper investigates the influence of ZnCl2 on the gamma attenuation and radiation shielding properties of tellurite glasses incorporating Bi2O3 and B2O3. Employing Geant4 simulation and XCOM ...program, the study explores the impact of varying ZnCl2 content on different gamma attenuation parameters such as linear attenuation coefficient (μ), radiation protection efficiency (RPE), effective atomic number (Zeff), and HVL. Moreover, the relation between these factors and the density of the studied glass system is discussed in details. It is found that the incremental addition of Bi2O3 significantly enhanced the photon attenuation properties of the tellurite glasses involved. The maximum Zeff values are observed at the low energy region between 0.015 and 0.1 MeV with the values of 53.016, 60.133, 65.950, 70.370, and 73.791 for the glass samples namely TBBZC1, TBBZC2, TBBZC3, TBBZC4, and TBBZC5, respectively. Furthermore, the HVL values fall between 0.0016 cm and 4.3546 cm indicates that the current glass system can be utilizes for gamma shielding applications. The results provide insights into the potential enhancement of radiation shielding efficiency in tellurite glasses, contributing valuable knowledge for the development of advanced materials in nuclear safety applications.
•Radiation protection of TeO2–ZnCl2–B2O3–Bi2O glass system.•Significant influence of ZnCl2 on the radiation shielding.•Monte Carlo simulations are employed.•A good agreement between the theory and the simulation.•TBBZC5 system has a potential use in nuclear and medical applications.
•The AgSe thin films were successfully synthesized by the thermal evaporation technique.•The structural and optical properties of the AgSe layer were discussed.•The mechanism conductivity for AgSe ...and CdTe layers was determined.•The effect of temperature for the n-AgSe/p-CdTe solar cell was discussed.
Because the previous works on Silver Selenide (AgSe) thin films were insufficient, incomplete, and lacking in-depth, the current study explores deeper into AgSe thin films. The current study is unique in that it examines the effect of annealing temperature on the structural, optical, and thermoelectrical properties of the thermally evaporated AgSe thin film, as well as the effect of temperature on the photovoltaic characteristics of the fabricated Ni/n-AgSe/p-CdTe/Pt solar cell in the range of (298–425 K). The pristine thin film was noncrystalline, while the rest of the annealed samples showed crystalline behavior, according to the results of the X-ray patterns (XRD) and the scanning electron microscope (SEM) examinations. Structural parameters for annealed samples were calculated. On the optical side, the number, and the type of dominant optical transitions were determined. It seemed evident that an allowed direct transition was the dominant one. The optical constants, the optical parameters, the dielectric constants, the energy loss functions, the optical and electrical conductivity were also calculated. On the electrothermal side, the results confirmed that the AgSe thin layer has n-type conductivity, while the CdTe thin layer has a p-type conductivity. The photovoltaic characteristics of the fabricated Ni/n-AgSe/p-CdTe/Pt solar cell were studied in the dark and illuminated conditions and at bias voltages in the range of (−3 to 3 volt). The highest power conversion efficiency (PCE) was for the annealed AgSe layer at 425 K. Based on this, we can confirm that the thin film annealed at 425 K is the best layer in the fabricated solar cells.
The technique of thermal evaporation was used to synthesize the As50Se50-xTex (x = 0, 25, and 50 at.%) thin films (∼500 nm). The scenarios of this research were focused on the phase change pathways ...of the fresh and annealed (at Tc) thin films. By measuring the surface resistance of the studied thin films in the thermal range between 300 and 600 K, the path of phase transitions from the amorphous to the crystalline state was determined. The average activation energy of phase transitions was computed for the entire system. The phase-transition temperature has been determined utilizing the first derivative of the sheet resistance as a function of temperature (Rs–T). The optical bandgap of the fresh and annealed (at Tc) thin films was determined utilizing Kubelka–Munk (K-M) function that was extracted after measuring the diffuse reflectivity spectra in the range of (300–2500 nm). The two molar optical constants (n, k), the molar dispersion and dielectric parameters have been computed. Values of effective plasmon energy (Ψ), Molar volume Vm, the effective number of electrons neff, the electron density parameter rs, the homopolar gap (E‾h), the heteropolar gap (C), the average gap (E‾g), the theoretical static dielectric constant (ε0th) and Phillips ionicity of the glasses under study were calculated according to Penn model. All computed parameters in this work were given to the phase change paths in the studied system to consider the possibility of using the chalcogenide system in the phase-change memory (PCM) applications.
•As-Se-Te alloys and then their thin films were successfully synthesized.•The surface resistance-temperature was measured.•Characteristic temperatures extracted from the first derivative of (Rs-T).•The optical bandgap and optical parameters were extracted.•The types and number of expectedchemical bonds were determined.
The structural, optical, electrical and photoelectric properties of
n
-type CdS
1−
x
Sb
x
layers at varied Sb doping concentrations (
x
= 0, 0.2, 0.4 and 0.6 at.%) were studied. The melt quenching ...process was used to generate the bulk form, whereas the thin layers were formed using the thermal evaporation method. To fabricate the Al/
n
-(CdS:Sb)/
p
-Si/Pt solar cell, pure CdS and antimony-doped CdS layers of up to 200 nm thickness (
n
-type side) were deposited on a single-crystallized silicon glass substrate (2 mm) with the Miller's directions (1 0 0). The fabricated solar cells' dark and illuminated current density–voltage (
J–V
), the power–voltage (
P–V
) and the capacitance–voltage (
C
–
V
) characteristics were thoroughly studied. As well, the open-circuit voltage, the short-circuit current, the fill factor and the power conversion efficiency (PCE) for the studied solar cell were computed. When the antimony ratio is 0.6 at.%, the maximum power conversion efficiency is 30.56%, with the main parameters:
J
sc
= 26.27 mA/cm
2
,
V
oc
= 0.84 V, and
FF
= 0.692. In the instance of using the manufactured devices as detectors, the responsivity and quantum efficiency in the spectrum range of (100–1000 nm) were determined.
Radiation protection is crucial for the safe utilization of ionizing radiation and minimizing the harmful effect upon exposure, hence some standards have been defined by some relevant organizations ...for the safe uses of radiation. One of the parameters relevant to the calculation of gamma ray shielding is the half-value layer (HVL), which is normally calculated using the knowledge of linear attenuation coefficient (μ). In this research, an attempt has been made to directly calculate HVL without the knowledge of μ via Monte Carlo simulation technique. For this purpose, in the Monte Carlo N‐Particle eXtended (MCNPX) code, F1, F5 and Mesh Popul sequences tallies were defined and the optimal structure for the least measurement error was introduced. The MCNPX calculated values showed reasonable agreement with the experimental findings. According to the obtained results, it is suggested that in order to reduce the error of HVL calculations, in exchange for the MCNPX code, the values of the R parameter and the radiation angle of the source should be considered according to the calculations introduced in this plan. Because the results show that by considering the measurement error between 6 and 20%, the code output can be cited in different energy ranges.
•Study uses MCNPX to investigate HVL calculation directly.•MCNPX and experiment show agreement.•Different energy ranges can be cited by considering the measurement error between 6 and 20%.
