The focal-plane module is the key component of the DEPFET sensor with signal compression (DSSC) mega-pixel X-ray imager and handles the data of 128 <inline-formula> <tex-math ...notation="LaTeX">\times512 </tex-math></inline-formula> pixels. We report on assembly-related aspects, discuss the experimental investigation of bonding behavior of different adhesives, and present the metrology and electrical test results of the production. The module consists of two silicon (Si) sensors with flip-chip connected CMOS integrated circuits, a Si-heat spreader, a low-temperature co-fired ceramics circuit board, and a molybdenum frame. A low-modulus urethane-film adhesive fills the gaps between on-board components and frame. It is also used between board and heat spreader, reduces the misfit strain, and minimizes the module warpage very efficiently. The heat spreader reduces the on-board temperature gradient by about one order of magnitude. The placement precision of the bare modules to each other and the frame is characterized by a standard deviation below 10 and 65 <inline-formula> <tex-math notation="LaTeX">\mu \text{m} </tex-math></inline-formula>, respectively. The displacement due to the in-plane rotation and vertical tilting errors remains below 80 and 50 <inline-formula> <tex-math notation="LaTeX">\mu \text{m} </tex-math></inline-formula>, respectively. The deflection of the sensor plane shows a mean value below 30 <inline-formula> <tex-math notation="LaTeX">\mu \text{m} </tex-math></inline-formula> with a standard deviation below 15 <inline-formula> <tex-math notation="LaTeX">\mu \text{m} </tex-math></inline-formula>. Less than 4% of the application-specified integrated circuits (ASICs) exhibit a malfunction. More than two-thirds of the sensors have a maximum leakage current below 1 <inline-formula> <tex-math notation="LaTeX">\mu \text{A} </tex-math></inline-formula>.
MIXS on BepiColombo and its DEPFET based focal plane instrumentation Treis, J.; Andricek, L.; Aschauer, F. ...
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment,
12/2010, Letnik:
624, Številka:
2
Journal Article
Recenzirano
Focal plane instrumentation based on DEPFET Macropixel devices, being a combination of the Detector–Amplifier structure DEPFET with a silicon drift chamber (SDD), has been proposed for the MIXS ...(Mercury Imaging X-ray Spectrometer) instrument on ESA's Mercury exploration mission BepiColombo. MIXS images X-ray fluorescent radiation from the Mercury surface with a lightweight X-ray mirror system on the focal plane detector to measure the spatially resolved element abundance in Mercury's crust. The sensor needs to have an energy resolution better than 200
eV FWHM at 1
keV and is required to cover an energy range from 0.5 to 10
keV, for a pixel size of
300
×
300
μ
m
2
. Main challenges for the instrument are radiation damage and the difficult thermal environment in the mercury orbit. The production of the first batch of flight devices has been finished at the MPI semiconductor laboratory. Prototype modules have been assembled to verify the electrical properties of the devices; selected results are presented here. The prototype devices, Macropixel prototypes for the SIMBOL-X focal plane, are electrically fully compatible, but have a pixel size of 0.5×0.5
mm
2. Excellent homogeneity and near Fano-limited energy resolution at high readout speeds have been observed on these devices.
This R&D activity is focused on the development of new modules for the upgrade of the ATLAS pixel system at the High Luminosity LHC (HL-LHC). The performance after irradiation of n-in-p pixel sensors ...of different active thicknesses is studied, together with an investigation of a novel interconnection technique offered by the Fraunhofer Institute EMFT in Munich, the Solid–Liquid-InterDiffusion (SLID), which is an alternative to the standard solder bump-bonding. The pixel modules are based on thin n-in-p sensors, with an active thickness of 75μm or 150μm, produced at the MPI Semiconductor Laboratory (MPI HLL) and on 100μm thick sensors with active edges, fabricated at VTT, Finland. Hit efficiencies are derived from beam test data for thin devices irradiated up to a fluence of 4×1015neq/cm2. For the active edge devices, the charge collection properties of the edge pixels before irradiation are discussed in detail, with respect to the inner ones, using measurements with radioactive sources. Beyond the active edge sensors, an additional ingredient needed to design four side buttable modules is the possibility of moving the wire bonding area from the chip surface facing the sensor to the backside, avoiding the implementation of the cantilever extruding beyond the sensor area. The feasibility of this process is under investigation with the FE-I3 SLID modules, where Inter Chip Vias are etched, employing an EMFT technology, with a cross section of 3μm×10μm, at the positions of the original wire bonding pads.
We present an R&D activity focused on the development of novel modules for the upgrade of the ATLAS pixel system at the High Luminosity LHC (HL-LHC). The modules consist of n-in-p pixel sensors, 100 ...or 200μm thick, produced at VTT (Finland) with an active edge technology, which considerably reduces the dead area at the periphery of the device. The sensors are interconnected with solder bump-bonding to the ATLAS FE-I3 and FE-I4 read-out chips, and characterised with radioactive sources and beam tests at the CERN-SPS and DESY. The results of these measurements will be discussed for devices before and after irradiation up to a fluence of 5×1015neq/cm2. We will also report on the R&D activity to obtain Inter Chip Vias (ICVs) on the ATLAS read-out chip in collaboration with the Fraunhofer Institute EMFT. This step is meant to prove the feasibility of the signal transport to the newly created readout pads on the backside of the chips allowing for four side buttable devices without the presently used cantilever for wire bonding. The read-out chips with ICVs will be interconnected to thin pixel sensors, 75μm and 150μm thick, with the Solid Liquid Interdiffusion (SLID) technology, which is an alternative to the standard solder bump-bonding.
The performance of pixel modules built from 75μm thin silicon sensors and ATLAS read-out chips employing the Solid Liquid InterDiffusion (SLID) interconnection technology is presented. This ...technology, developed by the Fraunhofer EMFT, is a possible alternative to the standard bump-bonding. It allows for stacking of different interconnected chip and sensor layers without destroying the already formed bonds. In combination with Inter-Chip-Vias (ICVs) this paves the way for vertical integration. Both technologies are combined in a pixel module concept which is the basis for the modules discussed in this paper.
Mechanical and electrical parameters of pixel modules employing both SLID interconnections and sensors of 75μm thickness are covered. The mechanical features discussed include the interconnection efficiency, alignment precision and mechanical strength. The electrical properties comprise the leakage currents, tuning characteristics, charge collection, cluster sizes and hit efficiencies. Targeting at a usage at the high luminosity upgrade of the LHC accelerator called HL-LHC, the results were obtained before and after irradiation up to fluences of 1016neq/cm2.
We present the results of the characterization of silicon pixel modules employing n-in-p planar sensors with an active thickness of 150 mu m, produced at MPP/HLL, and 100-200 mu m thin active edge ...sensor devices, produced at VTT in Finland. These thin sensors are designed as candidates for the ATLAS pixel detector upgrade to be operated at the HL-LHC, as they ensure radiation hardness at high fluences. We studied the behavior of these sensors at different bias voltages and different beam incident angles up to the maximum one expected for the new Insertable B-Layer of ATLAS and for HL-LHC detectors. Results obtained with 150 mu m thin sensors, assembled with the new ATLAS FE-I4 chip and irradiated up to a fluence of 4x10 super(15) n sub(eq)/cm super(2), show that they are excellent candidates for larger radii of the silicon pixel tracker in the upgrade of the ATLAS detector at HL-LHC.
We present an approach to construct position-sensitive silicon detectors with an integrated cooling circuit. Tests on samples demonstrate that a very modest liquid flow very effectively cool the ...devices up to a power dissipation of over 10 W/cm super(2). The liquid flow is found to have a negligible impact on the mechanical stability. A finite-element simulation predicts the cooling performance to an accuracy of approximately 10%.
The paper is based on the data of the 2009 DEPFET beam test at CERN SPS. The beam test used beams of pions and electrons with energies between 40 and 120
GeV, and the sensors tested were prototypes ...with thickness of
450
μ
m
and pixel pitch between 20 and
32
μ
m
. Intrinsic resolutions of the detectors are calculated by disentangling the contributions of measurement errors and multiple scattering in tracking residuals. Properties of the intrinsic resolution estimates and factors that influence them are discussed. For the DEPFET detectors in the beam test, the calculation yields intrinsic resolutions of
≈
1
μ
m
, with a typical accuracy of
0.1
μ
m
. Bias scan, angle scan, and energy scan are used as example studies to show that the intrinsic resolutions are a useful tool in studies of detector properties. With sufficiently precise telescopes, detailed resolution maps can be constructed and used to study and optimize detector performance.
A new pixel module concept is presented, where thin sensors and a novel vertical integration technique are combined. This R&D activity is carried out in view of the ATLAS pixel detector upgrades. A ...first set of n-in-p pixel sensors with active thicknesses of 75 and inline imageinline image has been produced using a thinning technique developed at the Max-Planck-Institut Halbleiterlabor (HLL). Charge Collection Efficiency measurements have been performed, yielding a higher CCE than expected from the present radiation damage models. The interconnection of thin n-in-p pixels to the FE-I3 ATLAS electronics is under way, exploiting the Solid Liquid Interdiffusion (SLID) technique developed by the Fraunhofer Institut EMFT. In addition, preliminary studies aimed at Inter-Chip-Vias (ICV) etching into the FE-I3 electronics are reported. ICVs will be used to route the signals vertically through the read-out chip, to newly created pads on the backside. This should serve as a proof of principle for future four-side tileable pixel assemblies, avoiding the cantilever presently needed in the chip for the wire bonding.
The performance requirements of vertex detectors for future linear collider experiments is very challenging especially for the detector's innermost sensor layers. The DEPleted Field Effect Transistor ...(DEPFET) combining detector and amplifier operation is capable to meet these requirements. A silicon technology is presented which allows production of large sensor arrays consisting of linear DEPFET detector structures. The envisaged pixel array offers a low noise and low power operation. To ensure a high radiation length a thinning technology based on direct wafer bonding is proposed.
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