A top-down nanofabrication approach involving molecular beam epitaxy and electron beam lithography was used to obtain silicon nanowire-based back gate field-effect transistors with Schottky contacts ...on silicon-on-insulator (SOI) wafers. The resulting device is applied in biomolecular detection based on the changes in the drain-source current (IDS). In this context, we have explained the physical mechanisms of charge carrier transport in the nanowire using energy band diagrams and numerical 2D simulations in TCAD. The results of the experiment and numerical modeling matched well and may be used to develop novel types of nanowire-based biosensors.
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•A simple approach for fabrication of a silicon nanowire field-effect transistor for protein detection.•An evaluation of the biosensor performance with model molecules.•An explanation of electrical detection mechanism.•A demonstration of the energy bands shifting.•2D simulation considering the biosensor surface charge concentration.
The near‐field effect of diffraction image self‐reproduction or self‐imaging of a periodic grating illuminated by quasi‐monochromatic wave is well‐known as the Talbot effect. Introducing a ...dislocation to a periodic structure provides a fork‐shaped modulation of the phase/amplitude, which produces discrete diffraction pattern in a far‐field consisting of optical vortices. In this paper, Fresnel diffraction at amplitude fork‐shaped grating is theoretically and experimentally studied. The coexistence of spatial ordering and local violation of translational symmetry of the structure manifests itself in a strict diffraction pattern consisting of optical vortices in the far‐field, which is shown to be accompanied by formation of a spatially ordered intensity distribution in the near‐field, reminiscent the Talbot carpets for periodic structures. These results demonstrate the first evidence of Talbot effect occurred under light diffraction at fork‐shaped gratings, being promising for deep understanding of near‐field singular optics phenomena.
These results demonstrate the first evidence of Talbot effect occurred under light diffraction at fork‐shaped gratings, and are promising for deep understanding of near‐field singular optics phenomena.
Fresnel diffraction on periodic gratings results in a two‐dimensional periodic distribution of light intensity, also known as the Talbot effect. Here this approach is extended to the family of ...superimposed structures with translational symmetry, which consist of superposed spatial harmonics. The Talbot effect is demonstrated to be valid for superimposed gratings. The considered superimposed gratings provide a wide range of textures of optical super‐lattices. These texture super‐lattices represent a Talbot carpets with a complex motif, which can be varied by choosing structure parameters. These results provide a new functionality for structuring optical lattices and can find potential applications in a wide range of light–matter interactions.
Fresnel diffraction at superimposed amplitude masks superposed by periodic spatially varying functions has been investigated. It has been shown that the Talbot effect is valid for superimposed gratings providing a large variety of textures of optical super‐lattices. The results obtained may provide new functionality for engineering optical super‐lattices.
Copper-doped titanium oxynitride (TiN x O y ) thin films were grown by atomic layer deposition (ALD) using the TiCl4 precursor, NH3, and O2 at 420 °C. Forming gas was used to reduce the background ...oxygen concentration and to transfer the copper atoms in an ALD chamber prior to the growth initiation of Cu-doped TiN x O y . Such forming gas-mediated Cu-doping of TiN x O y films had a pronounced effect on their resistivity, which dropped from 484 ± 8 to 202 ± 4 μΩ cm, and also on the resistance temperature coefficient (TCR), which decreased from 1000 to 150 ppm °C–1. We explored physical mechanisms causing this reduction by performing comparative analysis of atomic force microscopy, X-ray photoemission spectroscopy, X-ray diffraction, optical spectra, low-temperature transport, and Hall measurement data for the samples grown with and without forming gas doping. The difference in the oxygen concentration between the films did not exceed 6%. Copper segregated to the TiN x O y surface where its concentration reached 0.72%, but its penetration depth was less than 10 nm. Pronounced effects of the copper doping by forming gas included the TiN x O y film crystallite average size decrease from 57–59 to 32–34 nm, considerably finer surface granularity, electron concentration increase from 2.2(3) × 1022 to 3.5(1) × 1022 cm–3, and the electron mobility improvement from 0.56(4) to 0.92(2) cm2 V–1 s–1. The DC resistivity versus temperature R(T) measurements from 4.2 to 300 K showed a Cu-induced phase transition from a disordered to semimetallic state. The resistivity of Cu-doped TiN x O y films decreased with the temperature increase at low temperatures and reached the minimum near T = 50 K revealing signatures of the quantum interference effects similar to 2D Cu thin films, and then, semimetallic behavior was observed at higher temperatures. In TiN x O y films grown without forming gas, the resistivity decreased with the temperature increase as R(T) = – 1.88T 0.6 + 604 μΩ cm with no semimetallic behavior observed. The medium range resistivity and low TCR of Cu-doped TiN x O y make this material an attractive choice for improved matching resistors in RF analog circuits and Si complementary metal–oxide–semiconductor integrated circuits.
We fabricated Cu-doped TiNxOy thin film resistors by using atomic layer deposition, optical lithography, dry etching, Ti/Cu/Ti/Au e-beam evaporation and lift-off processes. The results of the ...measurements of the resistance temperature dependence, non-linearity, S-parameters at 0.01–26 GHz and details of the breakdown mechanism under high-voltage stress are reported. The devices’ sheet resistance is 220 ± 8 Ω/□ (480 ± 20 µΩ*cm); intrinsic resistance temperature coefficient (TCR) is ~400 ppm/°C in the T-range of 10–300 K; and S-parameters versus frequency are flat up to 2 GHz with maximum variation of 10% at 26 GHz. The resistors can sustain power and current densities up to ~5 kW*cm−2 and ~2 MA*cm−2, above which they switch to high-resistance state with the sheet resistance equal to ~200 kΩ/□ (~0.4 Ω*cm) caused by nitrogen and copper desorption from TiNxOy film. The Cu/Ti/TiNxOy contact is prone to ageing due to gradual titanium oxidation while the TiNxOy resistor body is stable. The resistors have strong potential for applications in high-frequency integrated and hybrid circuits that require small-footprint, medium-range resistors of 0.05–10 kΩ, with small TCR and high-power handling capability.
Three-layer iron-rich Fe3+xSi1−x/Ge/Fe3+xSi1−x (0.2 < x < 0.64) heterostructures on a Si(111) surface with Ge thicknesses of 4 nm and 7 nm were grown by molecular beam epitaxy. Systematic studies of ...the structural and morphological properties of the synthesized samples have shown that an increase in the Ge thickness causes a prolonged atomic diffusion through the interfaces, which significantly increases the lattice misfits in the Ge/Fe3+xSi1−x heterosystem due to the incorporation of Ge atoms into the Fe3+xSi1−x bottom layer. The resultant lowering of the total free energy caused by the development of the surface roughness results in a transition from an epitaxial to a polycrystalline growth of the upper Fe3+xSi1−x. The average lattice distortion and residual stress of the upper Fe3+xSi1−x were determined by electron diffraction and theoretical calculations to be equivalent to 0.2 GPa for the upper epitaxial layer with a volume misfit of −0.63% compared with a undistorted counterpart. The volume misfit follows the resultant interatomic misfit of |0.42|% with the bottom Ge layer, independently determined by atomic force microscopy. The variation in structural order and morphology significantly changes the magnetic properties of the upper Fe3+xSi1−x layer and leads to a subtle effect on the transport properties of the Ge layer. Both hysteresis loops and FMR spectra differ for the structures with 4 nm and 7 nm Ge layers. The FMR spectra exhibit two distinct absorption lines corresponding to two layers of ferromagnetic Fe3+xSi1−x films. At the same time, a third FMR line appears in the sample with the thicker Ge. The angular dependences of the resonance field of the FMR spectra measured in the plane of the film have a pronounced easy-axis type anisotropy, as well as an anisotropy corresponding to the cubic crystal symmetry of Fe3+xSi1−x, which implies the epitaxial orientation relationship of Fe3+xSi1−x (111)0−11 || Ge(111)1−10 || Fe3+xSi1−x (111)0−11 || Si(111)1−10. Calculated from ferromagnetic resonance (FMR) data saturation magnetization exceeds 1000 kA/m. The temperature dependence of the electrical resistivity of a Ge layer with thicknesses of 4 nm and 7 nm is of semiconducting type, which is, however, determined by different transport mechanisms.
Three-layer iron-rich Fe
Si
/Ge/Fe
Si
(0.2 <
< 0.64) heterostructures on a Si(111) surface with Ge thicknesses of 4 nm and 7 nm were grown by molecular beam epitaxy. Systematic studies of the ...structural and morphological properties of the synthesized samples have shown that an increase in the Ge thickness causes a prolonged atomic diffusion through the interfaces, which significantly increases the lattice misfits in the Ge/Fe
Si
heterosystem due to the incorporation of Ge atoms into the Fe
Si
bottom layer. The resultant lowering of the total free energy caused by the development of the surface roughness results in a transition from an epitaxial to a polycrystalline growth of the upper Fe
Si
. The average lattice distortion and residual stress of the upper Fe
Si
were determined by electron diffraction and theoretical calculations to be equivalent to 0.2 GPa for the upper epitaxial layer with a volume misfit of -0.63% compared with a undistorted counterpart. The volume misfit follows the resultant interatomic misfit of |0.42|% with the bottom Ge layer, independently determined by atomic force microscopy. The variation in structural order and morphology significantly changes the magnetic properties of the upper Fe
Si
layer and leads to a subtle effect on the transport properties of the Ge layer. Both hysteresis loops and FMR spectra differ for the structures with 4 nm and 7 nm Ge layers. The FMR spectra exhibit two distinct absorption lines corresponding to two layers of ferromagnetic Fe
Si
films. At the same time, a third FMR line appears in the sample with the thicker Ge. The angular dependences of the resonance field of the FMR spectra measured in the plane of the film have a pronounced easy-axis type anisotropy, as well as an anisotropy corresponding to the cubic crystal symmetry of Fe
Si
, which implies the epitaxial orientation relationship of Fe
Si
(111)0-11 || Ge(111)1-10 || Fe
Si
(111)0-11 || Si(111)1-10. Calculated from ferromagnetic resonance (FMR) data saturation magnetization exceeds 1000 kA/m. The temperature dependence of the electrical resistivity of a Ge layer with thicknesses of 4 nm and 7 nm is of semiconducting type, which is, however, determined by different transport mechanisms.
We propose a new device structure for room-temperature single-electron/hole transistors based on nanosize narrow-width fully depleted silicon-on-insulator (SOI) CMOS transistors. The floating body of ...SOI MOSFETs can become a Coulomb island, whose single charging energy is more than 30 meV, as the gate length and width of MOSFETs is less than 10 nm. As SOI MOSFETs are biased at accumulation, single-electron, or hole tunnels, are sent, one by one, from the source to the floating body and then to the drain via Zener tunneling process. N-channel SOI MOSFETs can have the functions of single-electron transistors (n-SETs) while p-channel MOSFETs can have the functions of single-hole transistors (p-SETs). SOI MOSFETs still behave as typical MOSFETs when biased at inversion. There is a gate voltage margin of 0.9 V to separate Coulomb blockade oscillations from CMOS normal operation.
Electronics Letters 37, 464 (2001) An entanglement-preserving photo-detector converts photon polarization to
electron spin. Up and down spin must respond equally to oppositely polarized
photons, ...creating a requirement for degenerate spin energies, ge=0 for
electrons. We present a plot of ge-factor versus lattice constant, analogous to
bandgap versus lattice constant, that can be used for g-factor engineering of
III-V alloys and quantum wells
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